Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes

Xinning Ho, Lina Ye, Slava V. Rotkin, Qing Cao, Sakulsuk Unarunotai, Shuaib Salamat, Muhammad A. Alam, John A. Rogers

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. The results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmlc contacts that exhibit negligible dependence of their resistances on gate voltage, For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response, Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.

Original languageEnglish (US)
Pages (from-to)499-503
Number of pages5
JournalNano letters
Volume10
Issue number2
DOIs
StatePublished - Feb 10 2010

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Ho, X., Ye, L., Rotkin, S. V., Cao, Q., Unarunotai, S., Salamat, S., Alam, M. A., & Rogers, J. A. (2010). Scaling properties in transistors that use aligned arrays of single-walled carbon nanotubes. Nano letters, 10(2), 499-503. https://doi.org/10.1021/nl903281v