Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures

K. V. Smith, E. T. Yu, J. M. Redwing, K. S. Boutros

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length scales ranging from ∼0.1 to >2 μm, in images obtained at fixed bias voltages. Acquisition of a series of images over a wide range of bias voltages allows local electronic structure to be probed with nanoscale spatial resolution both laterally and in depth. Combined with theoretical analysis of charge and potential distributions in the epitaxial layer structure under applied bias, these studies suggest that the dominant factor contributing to the observed variations in electronic structure is local lateral variations in AlxGa1-xN layer thickness.

Original languageEnglish (US)
Pages (from-to)2250-2252
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number15
DOIs
StatePublished - Oct 11 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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