Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures

K. V. Smith, E. T. Yu, Joan Marie Redwing, K. S. Boutros

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length scales ranging from ∼0.1 to >2 μm, in images obtained at fixed bias voltages. Acquisition of a series of images over a wide range of bias voltages allows local electronic structure to be probed with nanoscale spatial resolution both laterally and in depth. Combined with theoretical analysis of charge and potential distributions in the epitaxial layer structure under applied bias, these studies suggest that the dominant factor contributing to the observed variations in electronic structure is local lateral variations in AlxGa1-xN layer thickness.

Original languageEnglish (US)
Pages (from-to)2250-2252
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number15
DOIs
StatePublished - Oct 11 1999

Fingerprint

field effect transistors
capacitance
microscopy
scanning
electronic structure
electric potential
electronics
charge distribution
acquisition
inhomogeneity
spatial resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{af951671edfa4699b72d2a7c01183920,
title = "Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures",
abstract = "Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length scales ranging from ∼0.1 to >2 μm, in images obtained at fixed bias voltages. Acquisition of a series of images over a wide range of bias voltages allows local electronic structure to be probed with nanoscale spatial resolution both laterally and in depth. Combined with theoretical analysis of charge and potential distributions in the epitaxial layer structure under applied bias, these studies suggest that the dominant factor contributing to the observed variations in electronic structure is local lateral variations in AlxGa1-xN layer thickness.",
author = "Smith, {K. V.} and Yu, {E. T.} and Redwing, {Joan Marie} and Boutros, {K. S.}",
year = "1999",
month = "10",
day = "11",
doi = "10.1063/1.124980",
language = "English (US)",
volume = "75",
pages = "2250--2252",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures. / Smith, K. V.; Yu, E. T.; Redwing, Joan Marie; Boutros, K. S.

In: Applied Physics Letters, Vol. 75, No. 15, 11.10.1999, p. 2250-2252.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures

AU - Smith, K. V.

AU - Yu, E. T.

AU - Redwing, Joan Marie

AU - Boutros, K. S.

PY - 1999/10/11

Y1 - 1999/10/11

N2 - Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length scales ranging from ∼0.1 to >2 μm, in images obtained at fixed bias voltages. Acquisition of a series of images over a wide range of bias voltages allows local electronic structure to be probed with nanoscale spatial resolution both laterally and in depth. Combined with theoretical analysis of charge and potential distributions in the epitaxial layer structure under applied bias, these studies suggest that the dominant factor contributing to the observed variations in electronic structure is local lateral variations in AlxGa1-xN layer thickness.

AB - Scanning capacitance microscopy is used to characterize local electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor epitaxial layer structure. Lateral inhomogeneity in electronic properties is clearly observed, at length scales ranging from ∼0.1 to >2 μm, in images obtained at fixed bias voltages. Acquisition of a series of images over a wide range of bias voltages allows local electronic structure to be probed with nanoscale spatial resolution both laterally and in depth. Combined with theoretical analysis of charge and potential distributions in the epitaxial layer structure under applied bias, these studies suggest that the dominant factor contributing to the observed variations in electronic structure is local lateral variations in AlxGa1-xN layer thickness.

UR - http://www.scopus.com/inward/record.url?scp=0001468559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001468559&partnerID=8YFLogxK

U2 - 10.1063/1.124980

DO - 10.1063/1.124980

M3 - Article

AN - SCOPUS:0001468559

VL - 75

SP - 2250

EP - 2252

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

ER -