Scanning Tunneling Microscopy Chemical Signature of Point Defects on the MoS2(0001) Surface

Javier D. Fuhr, Andrés Saúl, Jorge Osvaldo Sofo

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Abstract

The electronic structure of the clean MoS2(0001) surface and its modification with several point defects was studied. The constant current scanning tunneling microscopy (STM) images and spectroscopic I vs V curves using the Tersoff-Hamann approximation were also calculated. It was found that when a S vacancy was present on the surface, gap state appears with weight mostly on the Mo atoms of the second layer and on the S atoms surrounding the vacancy. It was observed that the substitutional atoms of complete d band (Pd and Au) do not present magnetic polarization and slightly modify the density of states (DOS) near the Fermi energy.

Original languageEnglish (US)
Article number026802
Pages (from-to)268021-268024
Number of pages4
JournalPhysical Review Letters
Volume92
Issue number2
StatePublished - Jan 16 2004

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point defects
scanning tunneling microscopy
signatures
atoms
electronic structure
curves
polarization
approximation
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Scanning Tunneling Microscopy Chemical Signature of Point Defects on the MoS2(0001) Surface. / Fuhr, Javier D.; Saúl, Andrés; Sofo, Jorge Osvaldo.

In: Physical Review Letters, Vol. 92, No. 2, 026802, 16.01.2004, p. 268021-268024.

Research output: Contribution to journalArticle

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