Schottky barrier engineering in III-V nitrides via the piezoelectric effect

E. T. Yu, X. Z. Dang, L. S. Yu, D. Qiao, P. M. Asbeck, S. S. Lau, G. J. Sullivan, K. S. Boutros, J. M. Redwing

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Abstract

A method for enhancing effective Schottky barrier heights in III-V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1-xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1-xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current-voltage measurements performed on Schottky diodes.

Original languageEnglish (US)
Pages (from-to)1880-1882
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number13
DOIs
StatePublished - Dec 1 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Yu, E. T., Dang, X. Z., Yu, L. S., Qiao, D., Asbeck, P. M., Lau, S. S., Sullivan, G. J., Boutros, K. S., & Redwing, J. M. (1998). Schottky barrier engineering in III-V nitrides via the piezoelectric effect. Applied Physics Letters, 73(13), 1880-1882. https://doi.org/10.1063/1.122312