Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by plasma increases the percentage of F and O at the film surface, with the grafted species remaining within the first 5-10nm of the film. Analysis of current-voltage I(V) data reveals that high field conduction is an interfacially dominated phenomenon in the modified P(VDF-TrFE) thin films. A parametric study of Schottky emission theory indicates that conduction is dominated by change in Schottky barrier height relative to change in both material permittivity and Richardson constant. Schottky barrier height quantification estimates a lowering of the barrier height by 0.041eV due to plasma treatment, further supporting that conduction is surface dominated in thin P(VDF -TrFE) films, and that conduction can be significantly influenced via surface chemical modification.

Original languageEnglish (US)
Title of host publication2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages9-13
Number of pages5
ISBN (Electronic)9781538661925
DOIs
StatePublished - Nov 26 2018
Event2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018 - Cancun, Mexico
Duration: Oct 21 2018Oct 24 2018

Publication series

NameAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
Volume2018-October
ISSN (Print)0084-9162

Other

Other2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018
CountryMexico
CityCancun
Period10/21/1810/24/18

Fingerprint

Chemical modification
Plasmas
Thin films
Secondary ion mass spectrometry
Surface chemistry
Permittivity
X ray photoelectron spectroscopy
Electric potential

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Vecchio, M., Barhoumi Ep Meddeb, A., Ounaies, Z., Lanagan, M. T., & Shallenberger, J. (2018). Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films. In 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018 (pp. 9-13). [8544868] (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP; Vol. 2018-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CEIDP.2018.8544868
Vecchio, Michael ; Barhoumi Ep Meddeb, Amira ; Ounaies, Zoubeida ; Lanagan, Michael T. ; Shallenberger, Jeffrey. / Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films. 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 9-13 (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP).
@inproceedings{220ec5e08e6c41adab0474f3420b5cba,
title = "Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films",
abstract = "Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by plasma increases the percentage of F and O at the film surface, with the grafted species remaining within the first 5-10nm of the film. Analysis of current-voltage I(V) data reveals that high field conduction is an interfacially dominated phenomenon in the modified P(VDF-TrFE) thin films. A parametric study of Schottky emission theory indicates that conduction is dominated by change in Schottky barrier height relative to change in both material permittivity and Richardson constant. Schottky barrier height quantification estimates a lowering of the barrier height by 0.041eV due to plasma treatment, further supporting that conduction is surface dominated in thin P(VDF -TrFE) films, and that conduction can be significantly influenced via surface chemical modification.",
author = "Michael Vecchio and {Barhoumi Ep Meddeb}, Amira and Zoubeida Ounaies and Lanagan, {Michael T.} and Jeffrey Shallenberger",
year = "2018",
month = "11",
day = "26",
doi = "10.1109/CEIDP.2018.8544868",
language = "English (US)",
series = "Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "9--13",
booktitle = "2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018",
address = "United States",

}

Vecchio, M, Barhoumi Ep Meddeb, A, Ounaies, Z, Lanagan, MT & Shallenberger, J 2018, Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films. in 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018., 8544868, Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP, vol. 2018-October, Institute of Electrical and Electronics Engineers Inc., pp. 9-13, 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018, Cancun, Mexico, 10/21/18. https://doi.org/10.1109/CEIDP.2018.8544868

Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films. / Vecchio, Michael; Barhoumi Ep Meddeb, Amira; Ounaies, Zoubeida; Lanagan, Michael T.; Shallenberger, Jeffrey.

2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 9-13 8544868 (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films

AU - Vecchio, Michael

AU - Barhoumi Ep Meddeb, Amira

AU - Ounaies, Zoubeida

AU - Lanagan, Michael T.

AU - Shallenberger, Jeffrey

PY - 2018/11/26

Y1 - 2018/11/26

N2 - Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by plasma increases the percentage of F and O at the film surface, with the grafted species remaining within the first 5-10nm of the film. Analysis of current-voltage I(V) data reveals that high field conduction is an interfacially dominated phenomenon in the modified P(VDF-TrFE) thin films. A parametric study of Schottky emission theory indicates that conduction is dominated by change in Schottky barrier height relative to change in both material permittivity and Richardson constant. Schottky barrier height quantification estimates a lowering of the barrier height by 0.041eV due to plasma treatment, further supporting that conduction is surface dominated in thin P(VDF -TrFE) films, and that conduction can be significantly influenced via surface chemical modification.

AB - Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by plasma increases the percentage of F and O at the film surface, with the grafted species remaining within the first 5-10nm of the film. Analysis of current-voltage I(V) data reveals that high field conduction is an interfacially dominated phenomenon in the modified P(VDF-TrFE) thin films. A parametric study of Schottky emission theory indicates that conduction is dominated by change in Schottky barrier height relative to change in both material permittivity and Richardson constant. Schottky barrier height quantification estimates a lowering of the barrier height by 0.041eV due to plasma treatment, further supporting that conduction is surface dominated in thin P(VDF -TrFE) films, and that conduction can be significantly influenced via surface chemical modification.

UR - http://www.scopus.com/inward/record.url?scp=85059755887&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85059755887&partnerID=8YFLogxK

U2 - 10.1109/CEIDP.2018.8544868

DO - 10.1109/CEIDP.2018.8544868

M3 - Conference contribution

AN - SCOPUS:85059755887

T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP

SP - 9

EP - 13

BT - 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Vecchio M, Barhoumi Ep Meddeb A, Ounaies Z, Lanagan MT, Shallenberger J. Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films. In 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 9-13. 8544868. (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP). https://doi.org/10.1109/CEIDP.2018.8544868