TY - GEN
T1 - Schottky Barrier Height Quantification of Plasma Treated P(VDF-TRFE) Thin Films
AU - Vecchio, Michael
AU - Meddeb, Amira Barhoumi
AU - Ounaies, Zoubeida
AU - Lanagan, Michael T.
AU - Shallenberger, Jeff
N1 - Funding Information:
The authors of this publication would like to acknowledge both the financial support of the National Science Foundation as part of the Center for Dielectrics and Piezoelectrics under grant Nos. IIP-1361571 and IIP-1361503, as well as technical expertise in ToF-SIMS measurement and analysis provided by Jordan Lerach (ImaBiotech) and Vince Bojan (Materials Characterization Lab, Penn State University).
Funding Information:
The authors of this publication would like to acknowledge both the financial support of the National Science Foundation as part of the Center for Dielectrics and Piezoelectrics under grant Nos. IIP-1361571 and IIP-1361503, as well as technical expertise in ToF-SIMS measurement and analysis provided by Jordan Lerach (ImaBiotech) and Vince Bojan (Materials Characterization Lab, Penn State University)
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/26
Y1 - 2018/11/26
N2 - Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by plasma increases the percentage of F and O at the film surface, with the grafted species remaining within the first 5-10nm of the film. Analysis of current-voltage I(V) data reveals that high field conduction is an interfacially dominated phenomenon in the modified P(VDF-TrFE) thin films. A parametric study of Schottky emission theory indicates that conduction is dominated by change in Schottky barrier height relative to change in both material permittivity and Richardson constant. Schottky barrier height quantification estimates a lowering of the barrier height by 0.041eV due to plasma treatment, further supporting that conduction is surface dominated in thin P(VDF -TrFE) films, and that conduction can be significantly influenced via surface chemical modification.
AB - Angle-resolved XPS and ToF-SIMS are employed to determine the impact of O 2 /CF 4 plasma treatment on P(VDF-TrFE) surface chemistry. Results indicate that chemical modification by plasma increases the percentage of F and O at the film surface, with the grafted species remaining within the first 5-10nm of the film. Analysis of current-voltage I(V) data reveals that high field conduction is an interfacially dominated phenomenon in the modified P(VDF-TrFE) thin films. A parametric study of Schottky emission theory indicates that conduction is dominated by change in Schottky barrier height relative to change in both material permittivity and Richardson constant. Schottky barrier height quantification estimates a lowering of the barrier height by 0.041eV due to plasma treatment, further supporting that conduction is surface dominated in thin P(VDF -TrFE) films, and that conduction can be significantly influenced via surface chemical modification.
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U2 - 10.1109/CEIDP.2018.8544868
DO - 10.1109/CEIDP.2018.8544868
M3 - Conference contribution
AN - SCOPUS:85059755887
T3 - Annual Report - Conference on Electrical Insulation and Dielectric Phenomena, CEIDP
SP - 9
EP - 13
BT - 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 IEEE CEIDP Conference on Electrical Insulation and Dielectric Phenomena, CEIDP 2018
Y2 - 21 October 2018 through 24 October 2018
ER -