Schottky diodes on MOCVD grown AlGaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, D. W. Greve, M. Skowronski, M. Shin, Joan M. Redwing

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Au Schottky diodes were prepared by vacuum evaporation or by plasma sputtering on n-AlGaN(Si) films with Al mole fractions of 0,0.11 or 0.23. The barrier heights were deduced from C-V and I-T measurements. The difference between the C-V and I-T results was less than 0.1 eV for the barriers deposited at 300 °C on HF etched samles with prior in situ heating at 450 °C. For low deposition temperatures (about 150°C) C-V and I-T methods give results differing by some tenths of an eV. For deposition temperatures exceeding 450°C the diodes were very leaky. The barrier heights were 0.8 eV, 0. 9 eV and 1.1 eV for AlGaN with compositions of 0, 0.11 and 0.23. For plasma sputtered diodes on GaN and AlGaN (x=0.11) samples, the difference in C-V and I-T results was quite considerable and admittance spectroscopy indicated the presence of deep electron traps at 0.12-0.14 eV that were absent in vacuum evaporated diodes. For similar diodes on AlGaN(x=0.23) samples the results of C-V and I-T measurements were very close and no traps at 0.12-0.14 eV could be detected. This difference is most likely due to damage caused by low energy ions. More Al-rich films are less susceptible to such damage. Persistent photocapacitance was observed in n-AlGaN Schottky diodes after illumination at 85K.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume3
StatePublished - Dec 1 1998

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Metallorganic chemical vapor deposition
Diodes
Plasma diodes
Vacuum evaporation
Electron traps
Sputtering
Lighting
aluminum gallium nitride
Spectroscopy
Vacuum
Ions
Plasmas
Heating
Temperature
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Greve, D. W., Skowronski, M., Shin, M., & Redwing, J. M. (1998). Schottky diodes on MOCVD grown AlGaN films. MRS Internet Journal of Nitride Semiconductor Research, 3.
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Greve, D. W. ; Skowronski, M. ; Shin, M. ; Redwing, Joan M. / Schottky diodes on MOCVD grown AlGaN films. In: MRS Internet Journal of Nitride Semiconductor Research. 1998 ; Vol. 3.
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abstract = "Au Schottky diodes were prepared by vacuum evaporation or by plasma sputtering on n-AlGaN(Si) films with Al mole fractions of 0,0.11 or 0.23. The barrier heights were deduced from C-V and I-T measurements. The difference between the C-V and I-T results was less than 0.1 eV for the barriers deposited at 300 °C on HF etched samles with prior in situ heating at 450 °C. For low deposition temperatures (about 150°C) C-V and I-T methods give results differing by some tenths of an eV. For deposition temperatures exceeding 450°C the diodes were very leaky. The barrier heights were 0.8 eV, 0. 9 eV and 1.1 eV for AlGaN with compositions of 0, 0.11 and 0.23. For plasma sputtered diodes on GaN and AlGaN (x=0.11) samples, the difference in C-V and I-T results was quite considerable and admittance spectroscopy indicated the presence of deep electron traps at 0.12-0.14 eV that were absent in vacuum evaporated diodes. For similar diodes on AlGaN(x=0.23) samples the results of C-V and I-T measurements were very close and no traps at 0.12-0.14 eV could be detected. This difference is most likely due to damage caused by low energy ions. More Al-rich films are less susceptible to such damage. Persistent photocapacitance was observed in n-AlGaN Schottky diodes after illumination at 85K.",
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Polyakov, AY, Smirnov, NB, Govorkov, AV, Greve, DW, Skowronski, M, Shin, M & Redwing, JM 1998, 'Schottky diodes on MOCVD grown AlGaN films', MRS Internet Journal of Nitride Semiconductor Research, vol. 3.

Schottky diodes on MOCVD grown AlGaN films. / Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Greve, D. W.; Skowronski, M.; Shin, M.; Redwing, Joan M.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 3, 01.12.1998.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Schottky diodes on MOCVD grown AlGaN films

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Greve, D. W.

AU - Skowronski, M.

AU - Shin, M.

AU - Redwing, Joan M.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Au Schottky diodes were prepared by vacuum evaporation or by plasma sputtering on n-AlGaN(Si) films with Al mole fractions of 0,0.11 or 0.23. The barrier heights were deduced from C-V and I-T measurements. The difference between the C-V and I-T results was less than 0.1 eV for the barriers deposited at 300 °C on HF etched samles with prior in situ heating at 450 °C. For low deposition temperatures (about 150°C) C-V and I-T methods give results differing by some tenths of an eV. For deposition temperatures exceeding 450°C the diodes were very leaky. The barrier heights were 0.8 eV, 0. 9 eV and 1.1 eV for AlGaN with compositions of 0, 0.11 and 0.23. For plasma sputtered diodes on GaN and AlGaN (x=0.11) samples, the difference in C-V and I-T results was quite considerable and admittance spectroscopy indicated the presence of deep electron traps at 0.12-0.14 eV that were absent in vacuum evaporated diodes. For similar diodes on AlGaN(x=0.23) samples the results of C-V and I-T measurements were very close and no traps at 0.12-0.14 eV could be detected. This difference is most likely due to damage caused by low energy ions. More Al-rich films are less susceptible to such damage. Persistent photocapacitance was observed in n-AlGaN Schottky diodes after illumination at 85K.

AB - Au Schottky diodes were prepared by vacuum evaporation or by plasma sputtering on n-AlGaN(Si) films with Al mole fractions of 0,0.11 or 0.23. The barrier heights were deduced from C-V and I-T measurements. The difference between the C-V and I-T results was less than 0.1 eV for the barriers deposited at 300 °C on HF etched samles with prior in situ heating at 450 °C. For low deposition temperatures (about 150°C) C-V and I-T methods give results differing by some tenths of an eV. For deposition temperatures exceeding 450°C the diodes were very leaky. The barrier heights were 0.8 eV, 0. 9 eV and 1.1 eV for AlGaN with compositions of 0, 0.11 and 0.23. For plasma sputtered diodes on GaN and AlGaN (x=0.11) samples, the difference in C-V and I-T results was quite considerable and admittance spectroscopy indicated the presence of deep electron traps at 0.12-0.14 eV that were absent in vacuum evaporated diodes. For similar diodes on AlGaN(x=0.23) samples the results of C-V and I-T measurements were very close and no traps at 0.12-0.14 eV could be detected. This difference is most likely due to damage caused by low energy ions. More Al-rich films are less susceptible to such damage. Persistent photocapacitance was observed in n-AlGaN Schottky diodes after illumination at 85K.

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Polyakov AY, Smirnov NB, Govorkov AV, Greve DW, Skowronski M, Shin M et al. Schottky diodes on MOCVD grown AlGaN films. MRS Internet Journal of Nitride Semiconductor Research. 1998 Dec 1;3.