Abstract
The two-dimensional layered semiconducting di-chalcogenides are emerging as promising candidates for post-Si-CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back-gated multilayer MoS2 field-effect transistors. We observe a non-monotonic trend in the extracted effective field-effect mobility with layer thickness which is of relevance for the design of high-performance devices. We also discuss a detailed theoretical model based on Thomas-Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two-dimensional layered system. A model explaining the experimental findings related to screening and interlayer coupling in multilayer MoS2.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 268-273 |
| Number of pages | 6 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 1 2013 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
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Screening and interlayer coupling in multilayer MoS2. / Das, Saptarshi; Appenzeller, Joerg.
In: Physica Status Solidi - Rapid Research Letters, Vol. 7, No. 4, 01.04.2013, p. 268-273.Research output: Contribution to journal › Article
TY - JOUR
T1 - Screening and interlayer coupling in multilayer MoS2
AU - Das, Saptarshi
AU - Appenzeller, Joerg
PY - 2013/4/1
Y1 - 2013/4/1
N2 - The two-dimensional layered semiconducting di-chalcogenides are emerging as promising candidates for post-Si-CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back-gated multilayer MoS2 field-effect transistors. We observe a non-monotonic trend in the extracted effective field-effect mobility with layer thickness which is of relevance for the design of high-performance devices. We also discuss a detailed theoretical model based on Thomas-Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two-dimensional layered system. A model explaining the experimental findings related to screening and interlayer coupling in multilayer MoS2.
AB - The two-dimensional layered semiconducting di-chalcogenides are emerging as promising candidates for post-Si-CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back-gated multilayer MoS2 field-effect transistors. We observe a non-monotonic trend in the extracted effective field-effect mobility with layer thickness which is of relevance for the design of high-performance devices. We also discuss a detailed theoretical model based on Thomas-Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two-dimensional layered system. A model explaining the experimental findings related to screening and interlayer coupling in multilayer MoS2.
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U2 - 10.1002/pssr.201307015
DO - 10.1002/pssr.201307015
M3 - Article
AN - SCOPUS:84876423277
VL - 7
SP - 268
EP - 273
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 4
ER -