Metals diffused into bulk silicon can be manipulated to out-diffuse and precipitate in microsized droplets at surfaces, allowing for subsequent silicon wire growth. This technique allows for both high-throughput and precision in the size and positions of metal droplets on the silicon surface.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Mar 7 2011|
All Science Journal Classification (ASJC) codes
- Materials Science(all)