Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces

Mark D. Losego, Elizabeth A. Paisley, H. Spalding Craft, Peter G. Lam, Edward Sachet, Seiji Mita, Ramon Collazo, Zlatko Sitar, Jon Paul Maria

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Abstract

Selective area growth of thin films reduces the number of steps in microfabrication processing and enables novel device structures. Here, we report, for the first time, selective area epitaxy of an oxide material on a GaN surface. Chlorination of the GaN surface via wet chemical processing is found effective to disrupt Mg adsorption and selectively prevent molecular beam epitaxy growth of MgO. MgO films grown on neighboring, nonchlorinated surfaces are epitaxial with a (111) MgO||(0001) GaN crystallographic relationship. Better than 3 μm lateral resolution for the selective area growth of MgO on GaN is demonstrated.

Original languageEnglish (US)
Pages (from-to)36-45
Number of pages10
JournalJournal of Materials Research
Volume31
Issue number1
DOIs
Publication statusPublished - Jan 1 2016

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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