Selective-area growth and controlled substrate coupling of transition metal dichalcogenides

Brian M. Bersch, Sarah M. Eichfeld, Yu Chuan Lin, Kehao Zhang, Ganesh R. Bhimanapati, Aleksander F. Piasecki, Michael Labella, Joshua A. Robinson

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Developing a means for true bottom-up, selective-area growth of two-dimensional (2D) materials on device-ready substrates will enable synthesis in regions only where they are needed. Here, we demonstrate seed-free, site-specific nucleation of transition metal dichalcogenides (TMDs) with precise control over lateral growth by utilizing an ultra-thin polymeric surface functionalization capable of precluding nucleation and growth. This polymer functional layer (PFL) is derived from conventional photoresists and lithographic processing, and is compatible with multiple growth techniques, precursors (metal organics, solid-source) and TMDs. Additionally, we demonstrate that the substrate can play a major role in TMD transport properties. With proper TMD/ substrate decoupling, top-gated field-effect transistors (FETs) fabricated with selectively-grown monolayer MoS2 channels are competitive with current reported MoS2 FETs. The work presented here demonstrates that substrate surface engineering is key to realizing precisely located and geometrically-defined 2D layers via unseeded chemical vapor deposition techniques.

Original languageEnglish (US)
Article number025083
Journal2D Materials
Volume4
Issue number2
DOIs
StatePublished - Jun 2017

Fingerprint

Transition metals
transition metals
Substrates
Field effect transistors
Nucleation
field effect transistors
nucleation
organic solids
Functional polymers
Photoresists
photoresists
decoupling
Transport properties
Seed
seeds
Chemical vapor deposition
Monolayers
transport properties
Metals
vapor deposition

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Bersch, B. M., Eichfeld, S. M., Lin, Y. C., Zhang, K., Bhimanapati, G. R., Piasecki, A. F., ... Robinson, J. A. (2017). Selective-area growth and controlled substrate coupling of transition metal dichalcogenides. 2D Materials, 4(2), [025083]. https://doi.org/10.1088/2053-1583/aa6beb
Bersch, Brian M. ; Eichfeld, Sarah M. ; Lin, Yu Chuan ; Zhang, Kehao ; Bhimanapati, Ganesh R. ; Piasecki, Aleksander F. ; Labella, Michael ; Robinson, Joshua A. / Selective-area growth and controlled substrate coupling of transition metal dichalcogenides. In: 2D Materials. 2017 ; Vol. 4, No. 2.
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Bersch, BM, Eichfeld, SM, Lin, YC, Zhang, K, Bhimanapati, GR, Piasecki, AF, Labella, M & Robinson, JA 2017, 'Selective-area growth and controlled substrate coupling of transition metal dichalcogenides', 2D Materials, vol. 4, no. 2, 025083. https://doi.org/10.1088/2053-1583/aa6beb

Selective-area growth and controlled substrate coupling of transition metal dichalcogenides. / Bersch, Brian M.; Eichfeld, Sarah M.; Lin, Yu Chuan; Zhang, Kehao; Bhimanapati, Ganesh R.; Piasecki, Aleksander F.; Labella, Michael; Robinson, Joshua A.

In: 2D Materials, Vol. 4, No. 2, 025083, 06.2017.

Research output: Contribution to journalArticle

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AU - Piasecki, Aleksander F.

AU - Labella, Michael

AU - Robinson, Joshua A.

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Bersch BM, Eichfeld SM, Lin YC, Zhang K, Bhimanapati GR, Piasecki AF et al. Selective-area growth and controlled substrate coupling of transition metal dichalcogenides. 2D Materials. 2017 Jun;4(2). 025083. https://doi.org/10.1088/2053-1583/aa6beb