Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

Sung Min Park, Bo Wang, Saikat Das, Seung Chul Chae, Jin Seok Chung, Jong Gul Yoon, Long-qing Chen, Sang Mo Yang, Tae Won Noh

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias 2,3 . Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip 3,4 . However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

Original languageEnglish (US)
Pages (from-to)366-370
Number of pages5
JournalNature nanotechnology
Volume13
Issue number5
DOIs
StatePublished - May 1 2018

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Ferroelectric materials
Polarization
Microscopes
manipulators
Scanning
polarization
Electromechanical coupling
microscopes
scanning
ferroelectric materials
probes
symmetry
data storage
broken symmetry
Data storage equipment
Thin films
routes
engineering
gradients
thin films

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Atomic and Molecular Physics, and Optics
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Park, S. M., Wang, B., Das, S., Chae, S. C., Chung, J. S., Yoon, J. G., ... Noh, T. W. (2018). Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field. Nature nanotechnology, 13(5), 366-370. https://doi.org/10.1038/s41565-018-0083-5
Park, Sung Min ; Wang, Bo ; Das, Saikat ; Chae, Seung Chul ; Chung, Jin Seok ; Yoon, Jong Gul ; Chen, Long-qing ; Yang, Sang Mo ; Noh, Tae Won. / Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field. In: Nature nanotechnology. 2018 ; Vol. 13, No. 5. pp. 366-370.
@article{b60391190d764a59bf8c64897253eb39,
title = "Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field",
abstract = "Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias 2,3 . Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip 3,4 . However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.",
author = "Park, {Sung Min} and Bo Wang and Saikat Das and Chae, {Seung Chul} and Chung, {Jin Seok} and Yoon, {Jong Gul} and Long-qing Chen and Yang, {Sang Mo} and Noh, {Tae Won}",
year = "2018",
month = "5",
day = "1",
doi = "10.1038/s41565-018-0083-5",
language = "English (US)",
volume = "13",
pages = "366--370",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "Nature Publishing Group",
number = "5",

}

Park, SM, Wang, B, Das, S, Chae, SC, Chung, JS, Yoon, JG, Chen, L, Yang, SM & Noh, TW 2018, 'Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field', Nature nanotechnology, vol. 13, no. 5, pp. 366-370. https://doi.org/10.1038/s41565-018-0083-5

Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field. / Park, Sung Min; Wang, Bo; Das, Saikat; Chae, Seung Chul; Chung, Jin Seok; Yoon, Jong Gul; Chen, Long-qing; Yang, Sang Mo; Noh, Tae Won.

In: Nature nanotechnology, Vol. 13, No. 5, 01.05.2018, p. 366-370.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selective control of multiple ferroelectric switching pathways using a trailing flexoelectric field

AU - Park, Sung Min

AU - Wang, Bo

AU - Das, Saikat

AU - Chae, Seung Chul

AU - Chung, Jin Seok

AU - Yoon, Jong Gul

AU - Chen, Long-qing

AU - Yang, Sang Mo

AU - Noh, Tae Won

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias 2,3 . Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip 3,4 . However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

AB - Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient 1 that enables mechanical manipulation of polarization without applying an electrical bias 2,3 . Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip 3,4 . However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.

UR - http://www.scopus.com/inward/record.url?scp=85043461389&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043461389&partnerID=8YFLogxK

U2 - 10.1038/s41565-018-0083-5

DO - 10.1038/s41565-018-0083-5

M3 - Article

C2 - 29531332

AN - SCOPUS:85043461389

VL - 13

SP - 366

EP - 370

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

IS - 5

ER -