Abstract
A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.
Original language | English (US) |
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Journal | Journal of the Electrochemical Society |
Volume | 155 |
Issue number | 10 |
DOIs | |
State | Published - Sep 22 2008 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry