Selective deposition of ohmic contacts to p-InGaAs by electroless plating

E. M. Lysczek, Suzanne E. Mohney

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume155
Issue number10
DOIs
StatePublished - Sep 22 2008

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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