Abstract
A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.
| Original language | English (US) |
|---|---|
| Journal | Journal of the Electrochemical Society |
| Volume | 155 |
| Issue number | 10 |
| DOIs | |
| State | Published - Sep 22 2008 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
Cite this
}
Selective deposition of ohmic contacts to p-InGaAs by electroless plating. / Lysczek, E. M.; Mohney, Suzanne E.
In: Journal of the Electrochemical Society, Vol. 155, No. 10, 22.09.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Selective deposition of ohmic contacts to p-InGaAs by electroless plating
AU - Lysczek, E. M.
AU - Mohney, Suzanne E.
PY - 2008/9/22
Y1 - 2008/9/22
N2 - A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.
AB - A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.
UR - http://www.scopus.com/inward/record.url?scp=51849164972&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51849164972&partnerID=8YFLogxK
U2 - 10.1149/1.2958297
DO - 10.1149/1.2958297
M3 - Article
VL - 155
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 10
ER -