Selective deposition of ohmic contacts to p-InGaAs by electroless plating

E. M. Lysczek; Suzanne E. Mohney

doi:10.1149/1.2958297

Selective deposition of ohmic contacts to p-InGaAs by electroless plating

E. M. Lysczek, Suzanne E. Mohney

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5 Scopus citations

Abstract

A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.

Original language	English (US)
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	10
DOIs	https://doi.org/10.1149/1.2958297
State	Published - Sep 22 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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abstract = "A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.",

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AU - Lysczek, E. M.

AU - Mohney, Suzanne E.

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N2 - A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.

AB - A three-layer PdRuAu electrolessly deposited ohmic contact to p-InGaAs, suitable for use in a self-aligned process, is presented. Cross-sectional transmission electron microscopy shows that the electrolessly plated metal layers are dense with a thin uniform reaction between the Pd and InGaAs. This contact metallization remains shallow and electrically stable even after aging for 4 h at 250°C. An average specific contact resistance of (1.6±0.6) × 10-6 Ω cm2 was obtained for as-deposited contacts with an HCl surface treatment. When a UV ozone and N H4 OH surface treatment was used, specific contact resistances as low as (2.1±0.9) × 10-7 Ω cm2 were obtained.

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Selective deposition of ohmic contacts to p-InGaAs by electroless plating

Abstract

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