Graphene has shown the highest carrier Hall mobility of> 100,000 cm 2/Vs with theoretical saturation velocity (V sat) and source-injection velocity converging at ∼5E7 cm/sec  and ∼6E7 cm/sec, respectively. A potential combination of high current-carrying density, transconductance, and low access resistance could make graphene an attractive candidate for high-performance RF applications. So far, epitaxial graphene MOSFETs  in the early stages of development have revealed technical challenges: the currentvoltage characteristics are quasi-linear with weak saturation behaviors and low transconductance per gate capacitance <100 mS/mm). In addition, the lon/loff ratio has been <10. While epitaxial graphene RF FETs with Fmax of 14 GHz per 2 μm gate length were demonstrated in a self-aligned top-gated layout with the highest ever on-state current density of 3 A/mm at V ds = 5 V, field-effect mobility was limited below 200 cm2/Vs. There are only a few reports of a graphene-on-Si platform with on-stage current <0.02 mA/mm. .