Abstract
The authors have developed cold gate and refractory gate self-aligned process for the GaAs-based SISFET. Using either of these approaches, they have demonstrated 0. 7- mu m gate length devices with near-zero threshold voltage, transconductance of 280 mS/mm at 300 K and 400 mS/mm at 77 K and low gate leakage. They have also fabricated 23-stage ring oscillators which yielded delays of 35 ps/gate and speed-power products of 10 fj/gate at 300 K.
Original language | English (US) |
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Pages (from-to) | 444-447 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - Jan 1 1986 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry