TY - JOUR
T1 - Self-assembly crystal microribbons with nucleation additive for high-performance organic thin film transistors
AU - He, Zhengran
AU - Asare-Yeboah, Kyeiwaa
AU - Zhang, Ziyang
AU - Bi, Sheng
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - We demonstrate fabrication of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) crystal microribbon based organic thin film transistors (OTFTs) with a solvent exchange method and the addition of a nucleation agent. TIPS pentacene crystals were formed via self-assembly as a result of solubility difference between the double solvents. At the same time, 4-hexylbenzoic acid (HBA) was added as a nucleation agent and formed an interfacial layer on the silicon dioxide gate dielectrics, which dispersed the aggregated crystals and enhanced its morphology uniformity. TIPS pentacene crystal microribbon based OTFTs with HBA nucleation additive showed a hole mobility of up to 0.36 cm2 V-1 s-1, and particularly, a 9-fold enhancement in average mobilities, as compared to pristine crystal based OTFTs. The remarkable enhancement in device performance can be attributed to the improved crystallinity, reduced defects and charge trap centers located at the grain boundaries, and controlled crystallization and dispersion effect due to the addition of the HBA nucleation agent.
AB - We demonstrate fabrication of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) crystal microribbon based organic thin film transistors (OTFTs) with a solvent exchange method and the addition of a nucleation agent. TIPS pentacene crystals were formed via self-assembly as a result of solubility difference between the double solvents. At the same time, 4-hexylbenzoic acid (HBA) was added as a nucleation agent and formed an interfacial layer on the silicon dioxide gate dielectrics, which dispersed the aggregated crystals and enhanced its morphology uniformity. TIPS pentacene crystal microribbon based OTFTs with HBA nucleation additive showed a hole mobility of up to 0.36 cm2 V-1 s-1, and particularly, a 9-fold enhancement in average mobilities, as compared to pristine crystal based OTFTs. The remarkable enhancement in device performance can be attributed to the improved crystallinity, reduced defects and charge trap centers located at the grain boundaries, and controlled crystallization and dispersion effect due to the addition of the HBA nucleation agent.
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U2 - 10.7567/1347-4065/ab1bae
DO - 10.7567/1347-4065/ab1bae
M3 - Article
AN - SCOPUS:85066483808
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6
M1 - 061009
ER -