Self-assembly of nanostructured composite ZnO/polyaniline films

Nina Ivanivna Kovtyukhova, A. D. Gorchinskiy, C. Waraksa

Research output: Contribution to journalConference article

39 Citations (Scopus)

Abstract

Ultrathin composite ZnO/polyaniline (PAN) films were deposited from organic solutions on silicon and ITO substrates using wet layer-by-layer self-assembly technique. The film growth process was characterized by transmission electron microscopy, ellipsometry, atomic force microscopy, IR and UV-visible absorbance and photoluminescence spectroscopy, and electrical measurements. The Si substrates were pre-treated by chemical oxidation. Multilayer films were grown by sequential immersion of the substrate in an ethanolic ZnO sol and PAN solution in dimethyl formamide. The first adsorption cycle resulted in well-packed monoparticulate ZnO layer almost completely covering the substrate, which predetermined the regular growth of densely packed and quite smooth ten-layer ZnO/PAN film. Photoluminescence and IR data assumed chemical interaction between the components in neighbouring layers. The multilayer (ZnO/PAN)9ZnO film sandwiched between ITO and Pt electrodes exhibited strong photoelectrical response while both the components were photoelectrically inactive in our experimental conditions. The reversible conversion from insulating to conducting state was observed under irradiation by light with a wavelength below 350 nm.

Original languageEnglish (US)
Pages (from-to)424-430
Number of pages7
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume69
DOIs
StatePublished - Jan 14 2000
EventThe European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France
Duration: Jun 1 1999Jun 4 1999

Fingerprint

Polyaniline
Self assembly
self assembly
composite materials
Composite materials
Substrates
ITO (semiconductors)
Photoluminescence spectroscopy
Multilayer films
Ellipsometry
Dimethylformamide
Polymethyl Methacrylate
Silicon
Film growth
photoluminescence
Sols
Atomic force microscopy
Photoluminescence
Multilayers
electrical measurement

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kovtyukhova, Nina Ivanivna ; Gorchinskiy, A. D. ; Waraksa, C. / Self-assembly of nanostructured composite ZnO/polyaniline films. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2000 ; Vol. 69. pp. 424-430.
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Self-assembly of nanostructured composite ZnO/polyaniline films. / Kovtyukhova, Nina Ivanivna; Gorchinskiy, A. D.; Waraksa, C.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 69, 14.01.2000, p. 424-430.

Research output: Contribution to journalConference article

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AU - Kovtyukhova, Nina Ivanivna

AU - Gorchinskiy, A. D.

AU - Waraksa, C.

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N2 - Ultrathin composite ZnO/polyaniline (PAN) films were deposited from organic solutions on silicon and ITO substrates using wet layer-by-layer self-assembly technique. The film growth process was characterized by transmission electron microscopy, ellipsometry, atomic force microscopy, IR and UV-visible absorbance and photoluminescence spectroscopy, and electrical measurements. The Si substrates were pre-treated by chemical oxidation. Multilayer films were grown by sequential immersion of the substrate in an ethanolic ZnO sol and PAN solution in dimethyl formamide. The first adsorption cycle resulted in well-packed monoparticulate ZnO layer almost completely covering the substrate, which predetermined the regular growth of densely packed and quite smooth ten-layer ZnO/PAN film. Photoluminescence and IR data assumed chemical interaction between the components in neighbouring layers. The multilayer (ZnO/PAN)9ZnO film sandwiched between ITO and Pt electrodes exhibited strong photoelectrical response while both the components were photoelectrically inactive in our experimental conditions. The reversible conversion from insulating to conducting state was observed under irradiation by light with a wavelength below 350 nm.

AB - Ultrathin composite ZnO/polyaniline (PAN) films were deposited from organic solutions on silicon and ITO substrates using wet layer-by-layer self-assembly technique. The film growth process was characterized by transmission electron microscopy, ellipsometry, atomic force microscopy, IR and UV-visible absorbance and photoluminescence spectroscopy, and electrical measurements. The Si substrates were pre-treated by chemical oxidation. Multilayer films were grown by sequential immersion of the substrate in an ethanolic ZnO sol and PAN solution in dimethyl formamide. The first adsorption cycle resulted in well-packed monoparticulate ZnO layer almost completely covering the substrate, which predetermined the regular growth of densely packed and quite smooth ten-layer ZnO/PAN film. Photoluminescence and IR data assumed chemical interaction between the components in neighbouring layers. The multilayer (ZnO/PAN)9ZnO film sandwiched between ITO and Pt electrodes exhibited strong photoelectrical response while both the components were photoelectrically inactive in our experimental conditions. The reversible conversion from insulating to conducting state was observed under irradiation by light with a wavelength below 350 nm.

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