Self-correcting STTRAM under magnetic field attacks

Jae Won Jang, Jongsun Park, Swaroop Ghosh, Swarup Bhunia

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

Spin-Transfer Torque Random Access Memory (STTRAM) is a possible candidate for universal memory due to its high-speed, low-power, non-volatility, and low cost. Although attractive, STTRAM is susceptible to contactless tampering through malicious exposure to magnetic field with the intention to steal or modify the bitcell content. In this paper, for the first time to our knowledge, we analyze the impact of magnetic attacks on STTRAM using micro-magnetic simulations. Next, we propose a novel array-based sensor to detect the polarity and magnitude of such attacks and then propose two design techniques to mitigate the attack, namely, array sleep with encoding and variable strength Error Correction Code (ECC). Simulation results indicate that the proposed sensor can reliably detect an attack and provide sufficient compensation window (few ns to ∼100us) to enable proactive protection measures. Finally, we shows that variable-strength ECC can adapt correction capability to tolerate failures with various strength of an attack.

Original languageEnglish (US)
Title of host publication2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781450335201
DOIs
StatePublished - Jul 24 2015
Event52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015 - San Francisco, United States
Duration: Jun 7 2015Jun 11 2015

Publication series

NameProceedings - Design Automation Conference
Volume2015-July
ISSN (Print)0738-100X

Other

Other52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015
CountryUnited States
CitySan Francisco
Period6/7/156/11/15

Fingerprint

Random Access
Torque
Magnetic Field
Attack
Magnetic fields
Data storage equipment
Error correction
Error Correction
Sensors
Micromagnetics
Sensor
Sleep
Polarity
Simulation
Encoding
High Speed
Sufficient
Costs

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Modeling and Simulation

Cite this

Jang, J. W., Park, J., Ghosh, S., & Bhunia, S. (2015). Self-correcting STTRAM under magnetic field attacks. In 2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015 [7167261] (Proceedings - Design Automation Conference; Vol. 2015-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/2744769.2744909
Jang, Jae Won ; Park, Jongsun ; Ghosh, Swaroop ; Bhunia, Swarup. / Self-correcting STTRAM under magnetic field attacks. 2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (Proceedings - Design Automation Conference).
@inproceedings{81a2eecd9e9642d3a9cdd9bbf2be4d9c,
title = "Self-correcting STTRAM under magnetic field attacks",
abstract = "Spin-Transfer Torque Random Access Memory (STTRAM) is a possible candidate for universal memory due to its high-speed, low-power, non-volatility, and low cost. Although attractive, STTRAM is susceptible to contactless tampering through malicious exposure to magnetic field with the intention to steal or modify the bitcell content. In this paper, for the first time to our knowledge, we analyze the impact of magnetic attacks on STTRAM using micro-magnetic simulations. Next, we propose a novel array-based sensor to detect the polarity and magnitude of such attacks and then propose two design techniques to mitigate the attack, namely, array sleep with encoding and variable strength Error Correction Code (ECC). Simulation results indicate that the proposed sensor can reliably detect an attack and provide sufficient compensation window (few ns to ∼100us) to enable proactive protection measures. Finally, we shows that variable-strength ECC can adapt correction capability to tolerate failures with various strength of an attack.",
author = "Jang, {Jae Won} and Jongsun Park and Swaroop Ghosh and Swarup Bhunia",
year = "2015",
month = "7",
day = "24",
doi = "10.1145/2744769.2744909",
language = "English (US)",
series = "Proceedings - Design Automation Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015",
address = "United States",

}

Jang, JW, Park, J, Ghosh, S & Bhunia, S 2015, Self-correcting STTRAM under magnetic field attacks. in 2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015., 7167261, Proceedings - Design Automation Conference, vol. 2015-July, Institute of Electrical and Electronics Engineers Inc., 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015, San Francisco, United States, 6/7/15. https://doi.org/10.1145/2744769.2744909

Self-correcting STTRAM under magnetic field attacks. / Jang, Jae Won; Park, Jongsun; Ghosh, Swaroop; Bhunia, Swarup.

2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7167261 (Proceedings - Design Automation Conference; Vol. 2015-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Self-correcting STTRAM under magnetic field attacks

AU - Jang, Jae Won

AU - Park, Jongsun

AU - Ghosh, Swaroop

AU - Bhunia, Swarup

PY - 2015/7/24

Y1 - 2015/7/24

N2 - Spin-Transfer Torque Random Access Memory (STTRAM) is a possible candidate for universal memory due to its high-speed, low-power, non-volatility, and low cost. Although attractive, STTRAM is susceptible to contactless tampering through malicious exposure to magnetic field with the intention to steal or modify the bitcell content. In this paper, for the first time to our knowledge, we analyze the impact of magnetic attacks on STTRAM using micro-magnetic simulations. Next, we propose a novel array-based sensor to detect the polarity and magnitude of such attacks and then propose two design techniques to mitigate the attack, namely, array sleep with encoding and variable strength Error Correction Code (ECC). Simulation results indicate that the proposed sensor can reliably detect an attack and provide sufficient compensation window (few ns to ∼100us) to enable proactive protection measures. Finally, we shows that variable-strength ECC can adapt correction capability to tolerate failures with various strength of an attack.

AB - Spin-Transfer Torque Random Access Memory (STTRAM) is a possible candidate for universal memory due to its high-speed, low-power, non-volatility, and low cost. Although attractive, STTRAM is susceptible to contactless tampering through malicious exposure to magnetic field with the intention to steal or modify the bitcell content. In this paper, for the first time to our knowledge, we analyze the impact of magnetic attacks on STTRAM using micro-magnetic simulations. Next, we propose a novel array-based sensor to detect the polarity and magnitude of such attacks and then propose two design techniques to mitigate the attack, namely, array sleep with encoding and variable strength Error Correction Code (ECC). Simulation results indicate that the proposed sensor can reliably detect an attack and provide sufficient compensation window (few ns to ∼100us) to enable proactive protection measures. Finally, we shows that variable-strength ECC can adapt correction capability to tolerate failures with various strength of an attack.

UR - http://www.scopus.com/inward/record.url?scp=84944088467&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944088467&partnerID=8YFLogxK

U2 - 10.1145/2744769.2744909

DO - 10.1145/2744769.2744909

M3 - Conference contribution

AN - SCOPUS:84944088467

T3 - Proceedings - Design Automation Conference

BT - 2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Jang JW, Park J, Ghosh S, Bhunia S. Self-correcting STTRAM under magnetic field attacks. In 2015 52nd ACM/EDAC/IEEE Design Automation Conference, DAC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7167261. (Proceedings - Design Automation Conference). https://doi.org/10.1145/2744769.2744909