Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films

Dong Pan, Jian Xu, Elias Towe, Qin Xu, J. W. Hsu

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Abstract

We report the synthesis of (In,Ga)As/GaAs quantum dots on strain-relaxed (In,Ga)As epitaxial films. It is found that the incorporation of a relaxed prelayer provides a systematic and effective method for controlling the dot distribution and emission wavelength. The robustness of the optical properties of quantum dots to dislocations may provide a method for engineering the band structure of quantum dot devices. We demonstrate, for example, that longer band-to-band emission wavelengths can be obtained by simply decreasing the residual strain in the relaxed films.

Original languageEnglish (US)
Pages (from-to)2164-2166
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number15
DOIs
Publication statusPublished - Dec 1 1998

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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