Superconductor-normal-superconductor (SNS) weak links using a semiconductor as the normal region are of interest for applications in high-frequency Josephson devices and in superconducting field effect transistors. The authors discuss the requirements for semiconductor SNS Josephson and FET devices and describe the fabrication and characterization of planar SNS weak links in which the normal region, InAs, is part of a heterostructure consisting of a thin (100 nm) layer of n-InAs grown on undoped GaAs. Nb electrodes defined by electron beam lithography have been made with spacings as small as 260 nm. Preliminary measurements indicate that the devices have good electrical behavior which is well explained by SNS weak link theory, using coherence lengths calculated from measured material parameters. These weak links can be the basis for superconducting FET devices, and have the advantage of allowing simple device isolation compared with bulk InAs.
|Original language||English (US)|
|Journal||IEEE Transactions on Magnetics|
|State||Published - Jan 1 1987|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering