SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS.

A. W. Kleinsasser, Thomas Nelson Jackson, G. D. Pettit, H. Schmid, J. M. Woodall, D. P. Kern

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Superconductor-normal-superconductor (SNS) weak links using a semiconductor as the normal region are of interest for applications in high-frequency Josephson devices and in superconducting field effect transistors. The authors discuss the requirements for semiconductor SNS Josephson and FET devices and describe the fabrication and characterization of planar SNS weak links in which the normal region, InAs, is part of a heterostructure consisting of a thin (100 nm) layer of n-InAs grown on undoped GaAs. Nb electrodes defined by electron beam lithography have been made with spacings as small as 260 nm. Preliminary measurements indicate that the devices have good electrical behavior which is well explained by SNS weak link theory, using coherence lengths calculated from measured material parameters. These weak links can be the basis for superconducting FET devices, and have the advantage of allowing simple device isolation compared with bulk InAs.

Original languageEnglish (US)
JournalIEEE Transactions on Magnetics
VolumeMAG-23
Issue number2
StatePublished - Jan 1 1987

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Field effect transistors
Superconducting materials
Heterojunctions
Semiconductor materials
Electron beam lithography
Fabrication
Electrodes
indium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kleinsasser, A. W., Jackson, T. N., Pettit, G. D., Schmid, H., Woodall, J. M., & Kern, D. P. (1987). SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS. IEEE Transactions on Magnetics, MAG-23(2).
Kleinsasser, A. W. ; Jackson, Thomas Nelson ; Pettit, G. D. ; Schmid, H. ; Woodall, J. M. ; Kern, D. P. / SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS. In: IEEE Transactions on Magnetics. 1987 ; Vol. MAG-23, No. 2.
@article{80b0f940ec644fa8bc23c852b7846251,
title = "SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS.",
abstract = "Superconductor-normal-superconductor (SNS) weak links using a semiconductor as the normal region are of interest for applications in high-frequency Josephson devices and in superconducting field effect transistors. The authors discuss the requirements for semiconductor SNS Josephson and FET devices and describe the fabrication and characterization of planar SNS weak links in which the normal region, InAs, is part of a heterostructure consisting of a thin (100 nm) layer of n-InAs grown on undoped GaAs. Nb electrodes defined by electron beam lithography have been made with spacings as small as 260 nm. Preliminary measurements indicate that the devices have good electrical behavior which is well explained by SNS weak link theory, using coherence lengths calculated from measured material parameters. These weak links can be the basis for superconducting FET devices, and have the advantage of allowing simple device isolation compared with bulk InAs.",
author = "Kleinsasser, {A. W.} and Jackson, {Thomas Nelson} and Pettit, {G. D.} and H. Schmid and Woodall, {J. M.} and Kern, {D. P.}",
year = "1987",
month = "1",
day = "1",
language = "English (US)",
volume = "MAG-23",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

Kleinsasser, AW, Jackson, TN, Pettit, GD, Schmid, H, Woodall, JM & Kern, DP 1987, 'SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS.', IEEE Transactions on Magnetics, vol. MAG-23, no. 2.

SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS. / Kleinsasser, A. W.; Jackson, Thomas Nelson; Pettit, G. D.; Schmid, H.; Woodall, J. M.; Kern, D. P.

In: IEEE Transactions on Magnetics, Vol. MAG-23, No. 2, 01.01.1987.

Research output: Contribution to journalArticle

TY - JOUR

T1 - SEMICONDUCTOR HETEROSTRUCTURE WEAK LINKS FOR JOSEPHSON AND SUPERCONDUCTING FET APPLICATIONS.

AU - Kleinsasser, A. W.

AU - Jackson, Thomas Nelson

AU - Pettit, G. D.

AU - Schmid, H.

AU - Woodall, J. M.

AU - Kern, D. P.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - Superconductor-normal-superconductor (SNS) weak links using a semiconductor as the normal region are of interest for applications in high-frequency Josephson devices and in superconducting field effect transistors. The authors discuss the requirements for semiconductor SNS Josephson and FET devices and describe the fabrication and characterization of planar SNS weak links in which the normal region, InAs, is part of a heterostructure consisting of a thin (100 nm) layer of n-InAs grown on undoped GaAs. Nb electrodes defined by electron beam lithography have been made with spacings as small as 260 nm. Preliminary measurements indicate that the devices have good electrical behavior which is well explained by SNS weak link theory, using coherence lengths calculated from measured material parameters. These weak links can be the basis for superconducting FET devices, and have the advantage of allowing simple device isolation compared with bulk InAs.

AB - Superconductor-normal-superconductor (SNS) weak links using a semiconductor as the normal region are of interest for applications in high-frequency Josephson devices and in superconducting field effect transistors. The authors discuss the requirements for semiconductor SNS Josephson and FET devices and describe the fabrication and characterization of planar SNS weak links in which the normal region, InAs, is part of a heterostructure consisting of a thin (100 nm) layer of n-InAs grown on undoped GaAs. Nb electrodes defined by electron beam lithography have been made with spacings as small as 260 nm. Preliminary measurements indicate that the devices have good electrical behavior which is well explained by SNS weak link theory, using coherence lengths calculated from measured material parameters. These weak links can be the basis for superconducting FET devices, and have the advantage of allowing simple device isolation compared with bulk InAs.

UR - http://www.scopus.com/inward/record.url?scp=0022682775&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022682775&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0022682775

VL - MAG-23

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 2

ER -