SF6O2 plasma effects on silicon nitride passivation of AlGaNGaN high electron mobility transistors

David J. Meyer, Joseph R. Flemish, Joan Marie Redwing

Research output: Contribution to journalArticle

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Abstract

The effects of various plasma and wet chemical surface pretreatments on the electrical characteristics of AlGaNGaN high electron mobility transistors (HEMTs) passivated with plasma-deposited silicon nitride were investigated. The results of pulsed IV measurements show that samples exposed to various S F6 O2 plasma treatments have markedly better rf dispersion characteristics compared to samples that were either untreated or treated in wet buffered oxide etch prior to encapsulation. The improvement in these characteristics correlates with the reduction of carbon on the semiconductor surface as measured with x-ray photoelectron spectroscopy. HEMT channel sheet resistance was also affected by varying silicon nitride deposition parameters.

Original languageEnglish (US)
Article number223523
JournalApplied Physics Letters
Volume89
Issue number22
DOIs
StatePublished - Dec 7 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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