Shallow and thermally stable ohmic contacts to p-InAsP

S. H. Wang, E. M. Lysczek, Bangzhi Liu, J. A. Robinson, S. E. Mohney

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have investigated the electrical and metallurgical behavior of ohmic contacts to p- InAs0.80 P0.20. Auger depth profiling reveals that Ru, Ti, and V have better thermal stability against reaction than Pt, Pd, and Ni on p-InAsP. However, contacts with Pd deposited as the first layer exhibit lower specific contact resistances than contacts with Ti, V, Ni, Ru, or Pt as the first layer. For this reason, multilayer contacts were studied, adding Au as the top layer to minimize the metal sheet resistance. Transmission electron microscopy indicates that PdRuAu contacts aged for 3 days exhibit a uniform and shallow reaction with p-InAsP, with the Pd consuming only 4 nm of the semiconductor and the Ru serving as an effective diffusion barrier. Specific contact resistances of 3.8× 10-6 Ω cm2 as deposited and 1.7× 10-6 Ω cm2 for contacts aged at 250°C for 90 days in an evacuated quartz tube were measured for the PdRuAu contacts.

Original languageEnglish (US)
Pages (from-to)G479-G482
JournalJournal of the Electrochemical Society
Volume153
Issue number5
DOIs
StatePublished - Apr 17 2006

Fingerprint

Ohmic contacts
Contact resistance
electric contacts
contact resistance
Quartz
Diffusion barriers
Depth profiling
Sheet resistance
Sheet metal
Multilayers
Thermodynamic stability
metal sheets
Semiconductor materials
Transmission electron microscopy
thermal stability
quartz
tubes
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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Shallow and thermally stable ohmic contacts to p-InAsP. / Wang, S. H.; Lysczek, E. M.; Liu, Bangzhi; Robinson, J. A.; Mohney, S. E.

In: Journal of the Electrochemical Society, Vol. 153, No. 5, 17.04.2006, p. G479-G482.

Research output: Contribution to journalArticle

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