Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb

S. H. Wang, J. A. Robinson, S. E. Mohney, B. R. Bennett

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We report a shallow, thermally stable PtWAu (250145 nm) Ohmic contact to p-InGaSb prepared using a brief (N H4) 2 S rinse as part of the premetallization surface treatment. Cross-sectional transmission electron microscopy reveals that the PtWAu contacts have better thermal stability than previously reported PdWAu contacts, with the PtWAu contacts remaining shallow even after they are aged at 250 °C for 3 days. The specific contact resistances of as-deposited PtWAu, PdWAu, CoWAu, CuWAu, WAu, CrWAu, and AgWAu contacts are also compared, and the (N H4) 2 S rinse is found to partially relieve Fermi level pinning at the contactp-InGaSb interface.

Original languageEnglish (US)
Pages (from-to)293-297
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number2
StatePublished - Mar 2005

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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