Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping

J. F. DeGeolormo, D. K. Sodana, D. E. Kotecki, C. M. Ransom, J. Benedict, C. Zeller, C. Graimann, T. N. Jackso

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14 Scopus citations

Abstract

Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.

Original languageEnglish (US)
Pages (from-to)1378-1381
Number of pages4
JournalJournal of the Electrochemical Society
Volume141
Issue number5
DOIs
StatePublished - 1994

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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