Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping

J. F. DeGeolormo, D. K. Sodana, D. E. Kotecki, C. M. Ransom, J. Benedict, C. Zeller, C. Graimann, Thomas Nelson Jackson

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.

Original languageEnglish (US)
Pages (from-to)1378-1381
Number of pages4
JournalJournal of the Electrochemical Society
Volume141
Issue number5
DOIs
StatePublished - Jan 1 1994

Fingerprint

Arsenic
Silicon
Gases
Sheet resistance
Doping (additives)
Helium
Thermal diffusion
Argon
Transmission electron microscopy
Processing
arsine

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

DeGeolormo, J. F., Sodana, D. K., Kotecki, D. E., Ransom, C. M., Benedict, J., Zeller, C., ... Jackson, T. N. (1994). Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping. Journal of the Electrochemical Society, 141(5), 1378-1381. https://doi.org/10.1149/1.2054928
DeGeolormo, J. F. ; Sodana, D. K. ; Kotecki, D. E. ; Ransom, C. M. ; Benedict, J. ; Zeller, C. ; Graimann, C. ; Jackson, Thomas Nelson. / Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping. In: Journal of the Electrochemical Society. 1994 ; Vol. 141, No. 5. pp. 1378-1381.
@article{620d6e624eb04396a1fbc0d38f6ab799,
title = "Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping",
abstract = "Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6{\%} arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10{\%} TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.",
author = "DeGeolormo, {J. F.} and Sodana, {D. K.} and Kotecki, {D. E.} and Ransom, {C. M.} and J. Benedict and C. Zeller and C. Graimann and Jackson, {Thomas Nelson}",
year = "1994",
month = "1",
day = "1",
doi = "10.1149/1.2054928",
language = "English (US)",
volume = "141",
pages = "1378--1381",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "5",

}

DeGeolormo, JF, Sodana, DK, Kotecki, DE, Ransom, CM, Benedict, J, Zeller, C, Graimann, C & Jackson, TN 1994, 'Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping', Journal of the Electrochemical Society, vol. 141, no. 5, pp. 1378-1381. https://doi.org/10.1149/1.2054928

Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping. / DeGeolormo, J. F.; Sodana, D. K.; Kotecki, D. E.; Ransom, C. M.; Benedict, J.; Zeller, C.; Graimann, C.; Jackson, Thomas Nelson.

In: Journal of the Electrochemical Society, Vol. 141, No. 5, 01.01.1994, p. 1378-1381.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping

AU - DeGeolormo, J. F.

AU - Sodana, D. K.

AU - Kotecki, D. E.

AU - Ransom, C. M.

AU - Benedict, J.

AU - Zeller, C.

AU - Graimann, C.

AU - Jackson, Thomas Nelson

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.

AB - Shallow arsenic junctions were formed in short processing times using gas-phase rapid thermal diffusion with arsine or tertiarybutylarsine (TBA). A 60 s gas-phase diffusion at 1100°C using 3.6% arsine in helium at 760 Torr formed 150 nm junctions with a measured sheet resistance of 100 Ω/□. Shallow junctions were also formed with a 12 min diffusion at 900°C using 10% TBA in argon at 10 Torr. These TBA-formed junctions have arsenic concentration at the silicon surface greater than 1 X 1O20 atms/cm3 and a sheet resistance of 244 Ω/□. In addition, TEM cross sections show no process-induced damage at the junction for gas-phase doping.

UR - http://www.scopus.com/inward/record.url?scp=0028439336&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028439336&partnerID=8YFLogxK

U2 - 10.1149/1.2054928

DO - 10.1149/1.2054928

M3 - Article

VL - 141

SP - 1378

EP - 1381

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 5

ER -

DeGeolormo JF, Sodana DK, Kotecki DE, Ransom CM, Benedict J, Zeller C et al. Shallow n+ Junctions in Silicon by Arsenic Gas-Phase Doping. Journal of the Electrochemical Society. 1994 Jan 1;141(5):1378-1381. https://doi.org/10.1149/1.2054928