A new Pd/Pt/Au ohmic contact to p-InAs provides a lower specific contact resistance as deposited (9.6 × 10-7 Ω cm2) than Ti-based ohmic contacts prepared on the same epilayer (2.6 × 10-6 Ω cm2 or higher). The effect of the metal deposition method and annealing conditions on the resistance of the contacts is also reported.
|Original language||English (US)|
|Number of pages||3|
|State||Published - Dec 11 2003|
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering