Short-channel graphene nanoribbon transistors with enhanced symmetry between p- and n-branches

Matthew J. Hollander, Himanshu Madan, Nikhil Shukla, David W. Snyder, Joshua Alexander Robinson, Suman Datta

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Graphene's unique symmetry between p- and n-branches has enabled several interesting device applications; however, short-channel devices often exhibit degraded symmetry. We examine how graphene nanoribbon geometries can improve transfer characteristics and p-n symmetry, as well as reduce Dirac point shift for highly scaled graphene devices. RF graphene transistors utilizing a multiribbon channel are fabricated with channel length down to 100 nm, achieving 4.5-fold improved transconductance, 3-fold improved cutoff frequency, and 2.4-fold improved symmetry compared with sheet devices. The improved performance is linked to reduced contact effects by modeling the extent of charge transfer into the channel as a function of graphene width.

Original languageEnglish (US)
Article number055103
JournalApplied Physics Express
Volume7
Issue number5
DOIs
StatePublished - Jan 1 2014

Fingerprint

Nanoribbons
Graphene
graphene
Transistors
transistors
symmetry
Cutoff frequency
Transconductance
Charge transfer
transconductance
Geometry
cut-off
charge transfer
shift
geometry

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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Short-channel graphene nanoribbon transistors with enhanced symmetry between p- and n-branches. / Hollander, Matthew J.; Madan, Himanshu; Shukla, Nikhil; Snyder, David W.; Robinson, Joshua Alexander; Datta, Suman.

In: Applied Physics Express, Vol. 7, No. 5, 055103, 01.01.2014.

Research output: Contribution to journalArticle

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