Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor

Thomas Nelson Jackson, G. Pepper, J. F. DeGelormo, T. F. Kuech

Research output: Contribution to journalConference articlepeer-review

Abstract

The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 μm can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.

Original languageEnglish (US)
Pages (from-to)507-510
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 1990
Event1990 International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 9 1990Dec 12 1990

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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