A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 OMEGA -cm n-Si: V//o//c equals 0. 52 V, J//s//c equals 31. 5 mA/cm**2 (adjusted for Ag grid area), FF equals 0. 70 and effective area n equals 11. 5%. The dark I-V and C-V characteristics have also been evaluated.
|Original language||English (US)|
|Number of pages||5|
|State||Published - Jan 1 1980|
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