Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.

P. P. Sharma, T. C. Anthony, S Ashok, S. J. Fonash, L. L. Tongson

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Abstract

A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 OMEGA -cm n-Si: V//o//c equals 0. 52 V, J//s//c equals 31. 5 mA/cm**2 (adjusted for Ag grid area), FF equals 0. 70 and effective area n equals 11. 5%. The dark I-V and C-V characteristics have also been evaluated.

Original languageEnglish (US)
Pages551-555
Number of pages5
StatePublished - Jan 1 1980

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Sharma, P. P., Anthony, T. C., Ashok, S., Fonash, S. J., & Tongson, L. L. (1980). Si AND GaAs SIS HETEROSTRUCTURE SOLAR CELLS USING SPRAY-DEPOSITED ITO.. 551-555.