Si and GaAs SIS heterostructure solar cells using spray-deposited ITO

P. P. Sharma, T. C. Anthony, S. Ashok, S. J. Fonash, L. L. Tongson

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A systematic study of semiconductor-insulator-semiconductor (SIS) solar cells has been undertaken on n-type Si and GaAs using spray-deposited indium-tin oxide (ITO) for the window layer of the heterostructure. The optical and electrical characteristics of the ITO layer as well as the thickness of the I-layer have been optimized to yield the following photovoltaic parameters on 1 Ω-cm n-Si: Voc=0.52 V, Jsc=31.5 mA/cm2(adjusted for Ag grid area), FF=0.70 and effective area η=11.5%. The dark I-V and C-V characteristics have also been evaluated to identify the mechanisms of barrier formation and current flow.

Original languageEnglish (US)
Pages (from-to)551-556
Number of pages6
JournalJapanese Journal of Applied Physics
Volume19
DOIs
StatePublished - Jan 1980

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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