SiC-SiO(x) heterojunctions in nanowires

Yan Qiu Zhu, Wei Bing Hu, Wen Kuang Hsu, Mauricio Terrones, Nicole Grobert, Jonathan P. Hare, Harold W. Kroto, David R.M. Walton, Humberto Terrones

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84 Scopus citations

Abstract

Novel 2-D nanoscale SiC networks have been generated by heating SiC-Fe- Co mixtures under a CO atmosphere. Examination of the products by EDX and HRTEM showed that most of the nanowires consist of β-SiC elongated single crystals, wrapped in amorphous SiO(x) sheaths. Intriguing crystalline features and defects associated with SiC nanowires were observed. We believe that a binary Fe-Co catalyst is responsible for the SiC network: Fe catalyses the formation of the SiC inner cores and Co the SiO(x) (x=1-2) outer shell. A twostep growth mechanism, involving a vapour-liquid-solid (V-L-S) step, is thought to account for SiC nanowire creation.

Original languageEnglish (US)
Pages (from-to)3173-3178
Number of pages6
JournalJournal of Materials Chemistry
Volume9
Issue number12
DOIs
StatePublished - Jan 1 1999

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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    Zhu, Y. Q., Hu, W. B., Hsu, W. K., Terrones, M., Grobert, N., Hare, J. P., Kroto, H. W., Walton, D. R. M., & Terrones, H. (1999). SiC-SiO(x) heterojunctions in nanowires. Journal of Materials Chemistry, 9(12), 3173-3178. https://doi.org/10.1039/a905547i