Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi 2Ti 2O 7 high-k gate dielectrics

Kwang Hwan Cho, Min-Gyu Kang, Ho Won Jang, Hyun Yong Shin, Chong Yun Kang, Seok Jin Yoon

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We report the fabrication of organic thin-film transistors (OTFTs) with high-k gate dielectrics of Mn-doped Bi 2Ti 2O 7 (BTO) films. 3% Mn-doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10 -8 A/cm 2 at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10 -4 A/cm 2. Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene-based OTFTs with the Mn-doped BTO gate dielectrics. (

Original languageEnglish (US)
Pages (from-to)208-210
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume6
Issue number5
DOIs
StatePublished - May 1 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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