Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi 2Ti 2O 7 high-k gate dielectrics

Kwang Hwan Cho, Min-Gyu Kang, Ho Won Jang, Hyun Yong Shin, Chong Yun Kang, Seok Jin Yoon

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the fabrication of organic thin-film transistors (OTFTs) with high-k gate dielectrics of Mn-doped Bi 2Ti 2O 7 (BTO) films. 3% Mn-doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10 -8 A/cm 2 at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10 -4 A/cm 2. Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene-based OTFTs with the Mn-doped BTO gate dielectrics. (

Original languageEnglish (US)
Pages (from-to)208-210
Number of pages3
JournalPhysica Status Solidi - Rapid Research Letters
Volume6
Issue number5
DOIs
StatePublished - May 1 2012

Fingerprint

Gate dielectrics
Thin film transistors
Leakage currents
leakage
transistors
thin films
Oxygen vacancies
Pulsed laser deposition
pulsed laser deposition
Polymers
Electric properties
electrical properties
Electric fields
Doping (additives)
Fabrication
fabrication
electric fields
polymers
Electric potential
electric potential

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Cho, Kwang Hwan ; Kang, Min-Gyu ; Jang, Ho Won ; Shin, Hyun Yong ; Kang, Chong Yun ; Yoon, Seok Jin. / Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi 2Ti 2O 7 high-k gate dielectrics. In: Physica Status Solidi - Rapid Research Letters. 2012 ; Vol. 6, No. 5. pp. 208-210.
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Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi 2Ti 2O 7 high-k gate dielectrics. / Cho, Kwang Hwan; Kang, Min-Gyu; Jang, Ho Won; Shin, Hyun Yong; Kang, Chong Yun; Yoon, Seok Jin.

In: Physica Status Solidi - Rapid Research Letters, Vol. 6, No. 5, 01.05.2012, p. 208-210.

Research output: Contribution to journalArticle

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AB - We report the fabrication of organic thin-film transistors (OTFTs) with high-k gate dielectrics of Mn-doped Bi 2Ti 2O 7 (BTO) films. 3% Mn-doped BTO films deposited on polymer substrates by pulsed laser deposition at room temperature exhibit low leakage currents of 2.1 × 10 -8 A/cm 2 at an applied electric field of 0.3 MV/cm, while undoped BTO films show much higher leakage currents of 4.3 × 10 -4 A/cm 2. Mn doping effectively reduces the number of oxygen vacancies in the films and improves the electrical properties. Low operation voltage and significantly reduced leakage currents are demonstrated in pentacene-based OTFTs with the Mn-doped BTO gate dielectrics. (

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