Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi ₂Ti ₂O ₇ high-k gate dielectrics

Engineering & Materials Science

• Gate dielectrics 100%
• Thin film transistors 89%
• Leakage currents 75%
• Pulsed laser deposition 27%
• Oxygen vacancies 27%
• Doping (additives) 19%
• Electric properties 18%
• Electric fields 16%
• Fabrication 13%
• Polymers 12%
• Substrates 12%
• Temperature 7%

Chemical Compounds

• Leakage Current 92%
• Dielectric Material 61%
• Liquid Film 33%
• Pulsed Laser Deposition 23%
• Electric Field 15%
• Electrical Property 14%
• Voltage 12%
• Ambient Reaction Temperature 9%
• Dioxygen 8%

Physics & Astronomy

• leakage 58%
• transistors 55%
• thin films 36%
• pulsed laser deposition 16%
• electrical properties 12%
• fabrication 10%
• oxygen 10%
• electric fields 10%
• polymers 10%
• room temperature 9%
• electric potential 9%