Silicidation of silicon nanowires by platinum

Bangzhi Liu, Yanfeng Wang, Sarah Dilts, Theresa S. Mayer, Suzanne E. Mohney

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction product PtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planar geometry, and the formation of PtSi was the motivation for our study. Silicidation was carried out by annealing R on Si nanowires from 250 to 700°C, and the reaction products were characterized by transmission electron microscopy. Strikingly different morphologies of the reacted nanowires were observed depending on the annealing temperature, platinum film thickness, silicon nanowire diameter, and level of unintentional oxygen contamination in the annealing furnace. Conversion to PtSi was successfully realized by annealing above 400°C in purified N2 gas. A uniform morphology was achieved for nanowires with an appropriate combination of Si nanowire diameter and Pt film thickness to form PtSi without excess Pt or Si. Similar to the planar silicidation process, oxygen affects the nanowire silicidation process greatly.

Original languageEnglish (US)
Pages (from-to)818-824
Number of pages7
JournalNano Letters
Volume7
Issue number3
DOIs
StatePublished - Mar 1 2007

Fingerprint

Silicon
Platinum
Nanowires
platinum
nanowires
silicon
Annealing
annealing
Reaction products
reaction products
Film thickness
film thickness
Oxygen
oxygen
Solid state reactions
furnaces
contamination
Furnaces
Contamination
Gases

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Liu, Bangzhi ; Wang, Yanfeng ; Dilts, Sarah ; Mayer, Theresa S. ; Mohney, Suzanne E. / Silicidation of silicon nanowires by platinum. In: Nano Letters. 2007 ; Vol. 7, No. 3. pp. 818-824.
@article{ea8a8794201d4f5c8c5571675446d55b,
title = "Silicidation of silicon nanowires by platinum",
abstract = "The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction product PtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planar geometry, and the formation of PtSi was the motivation for our study. Silicidation was carried out by annealing R on Si nanowires from 250 to 700°C, and the reaction products were characterized by transmission electron microscopy. Strikingly different morphologies of the reacted nanowires were observed depending on the annealing temperature, platinum film thickness, silicon nanowire diameter, and level of unintentional oxygen contamination in the annealing furnace. Conversion to PtSi was successfully realized by annealing above 400°C in purified N2 gas. A uniform morphology was achieved for nanowires with an appropriate combination of Si nanowire diameter and Pt film thickness to form PtSi without excess Pt or Si. Similar to the planar silicidation process, oxygen affects the nanowire silicidation process greatly.",
author = "Bangzhi Liu and Yanfeng Wang and Sarah Dilts and Mayer, {Theresa S.} and Mohney, {Suzanne E.}",
year = "2007",
month = "3",
day = "1",
doi = "10.1021/nl062393r",
language = "English (US)",
volume = "7",
pages = "818--824",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "3",

}

Silicidation of silicon nanowires by platinum. / Liu, Bangzhi; Wang, Yanfeng; Dilts, Sarah; Mayer, Theresa S.; Mohney, Suzanne E.

In: Nano Letters, Vol. 7, No. 3, 01.03.2007, p. 818-824.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Silicidation of silicon nanowires by platinum

AU - Liu, Bangzhi

AU - Wang, Yanfeng

AU - Dilts, Sarah

AU - Mayer, Theresa S.

AU - Mohney, Suzanne E.

PY - 2007/3/1

Y1 - 2007/3/1

N2 - The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction product PtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planar geometry, and the formation of PtSi was the motivation for our study. Silicidation was carried out by annealing R on Si nanowires from 250 to 700°C, and the reaction products were characterized by transmission electron microscopy. Strikingly different morphologies of the reacted nanowires were observed depending on the annealing temperature, platinum film thickness, silicon nanowire diameter, and level of unintentional oxygen contamination in the annealing furnace. Conversion to PtSi was successfully realized by annealing above 400°C in purified N2 gas. A uniform morphology was achieved for nanowires with an appropriate combination of Si nanowire diameter and Pt film thickness to form PtSi without excess Pt or Si. Similar to the planar silicidation process, oxygen affects the nanowire silicidation process greatly.

AB - The solid-state reaction between platinum and silicon nanowires grown by the vapor-liquid-solid technique was studied. The reaction product PtSi is an attractive candidate for contacts to p-type silicon nanowires due to the low barrier height of PtSi contacts to p-type Si in the planar geometry, and the formation of PtSi was the motivation for our study. Silicidation was carried out by annealing R on Si nanowires from 250 to 700°C, and the reaction products were characterized by transmission electron microscopy. Strikingly different morphologies of the reacted nanowires were observed depending on the annealing temperature, platinum film thickness, silicon nanowire diameter, and level of unintentional oxygen contamination in the annealing furnace. Conversion to PtSi was successfully realized by annealing above 400°C in purified N2 gas. A uniform morphology was achieved for nanowires with an appropriate combination of Si nanowire diameter and Pt film thickness to form PtSi without excess Pt or Si. Similar to the planar silicidation process, oxygen affects the nanowire silicidation process greatly.

UR - http://www.scopus.com/inward/record.url?scp=34047095098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047095098&partnerID=8YFLogxK

U2 - 10.1021/nl062393r

DO - 10.1021/nl062393r

M3 - Article

VL - 7

SP - 818

EP - 824

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 3

ER -