A codeposited layer of silicon and a metal that is reactive to Ga and a dopant of GaAs will serve as an improved ohmic contact to GaAs. An example is a coevaporated or cosputtered layer of Si and Pd. The layer is deposited on (100) or (110) oriented GaAs and is stable between 350 degree C and 500 degree C. Advantages are outlined.
|Original language||English (US)|
|Number of pages||1|
|Journal||IBM technical disclosure bulletin|
|State||Published - Feb 1 1985|
All Science Journal Classification (ASJC) codes