SILICIDE OHMIC CONTACT TO GaAs.

Research output: Contribution to journalArticle

Abstract

A codeposited layer of silicon and a metal that is reactive to Ga and a dopant of GaAs will serve as an improved ohmic contact to GaAs. An example is a coevaporated or cosputtered layer of Si and Pd. The layer is deposited on (100) or (110) oriented GaAs and is stable between 350 degree C and 500 degree C. Advantages are outlined.

Original languageEnglish (US)
Number of pages1
JournalIBM technical disclosure bulletin
Volume27
Issue number9
StatePublished - Feb 1 1985

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Ohmic contacts
Doping (additives)
Silicon
Metals

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "A codeposited layer of silicon and a metal that is reactive to Ga and a dopant of GaAs will serve as an improved ohmic contact to GaAs. An example is a coevaporated or cosputtered layer of Si and Pd. The layer is deposited on (100) or (110) oriented GaAs and is stable between 350 degree C and 500 degree C. Advantages are outlined.",
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SILICIDE OHMIC CONTACT TO GaAs. / Jackson, Thomas Nelson; Kuan, T. S.

In: IBM technical disclosure bulletin, Vol. 27, No. 9, 01.02.1985.

Research output: Contribution to journalArticle

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