Silicon nanowire tunneling field-effect transistor arrays

Improving subthreshold performance using excimer laser annealing

Joshua T. Smith, Christian Sandow, Saptarshi Das, Renato A. Minamisawa, Siegfried Mantl, Joerg Appenzeller

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We have experimentally established that the inverse subthreshold slope S of a Si nanowire tunneling field-effect transistor (NW-TFET) array can be within 9% of the theoretical limit when the doping profile along the channel is properly engineered. In particular, we have demonstrated that combining excimer laser annealing with a low-temperature rapid thermal anneal results in an abrupt doping profile at the source/channel interface as evidenced by the electrical characteristics. Gate-controlled tunneling has been confirmed by evaluating S as a function of temperature. The good agreement between our experimental data and simulation allows performance predictions for more aggressively scaled TFETs. We find that Si NW-TFETs can be indeed expected to deliver S-values below 60 mV/dec for optimized device structures.

Original languageEnglish (US)
Article number5766728
Pages (from-to)1822-1829
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume58
Issue number7
DOIs
StatePublished - Jul 1 2011

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Excimer lasers
Silicon
Field effect transistors
Nanowires
Doping (additives)
Annealing
Temperature
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Smith, Joshua T. ; Sandow, Christian ; Das, Saptarshi ; Minamisawa, Renato A. ; Mantl, Siegfried ; Appenzeller, Joerg. / Silicon nanowire tunneling field-effect transistor arrays : Improving subthreshold performance using excimer laser annealing. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 7. pp. 1822-1829.
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Silicon nanowire tunneling field-effect transistor arrays : Improving subthreshold performance using excimer laser annealing. / Smith, Joshua T.; Sandow, Christian; Das, Saptarshi; Minamisawa, Renato A.; Mantl, Siegfried; Appenzeller, Joerg.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 7, 5766728, 01.07.2011, p. 1822-1829.

Research output: Contribution to journalArticle

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