Silicon nanowires: Doping dependent n- and p- channel FET behavior

Kumhyo Byon, John E. Fischer, Kofi W. Adu, Peter C. Eklund

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The electrical transport properties of field effect transistor (FET) devices made of silicon nanowires (SiNWs) synthesized by pulsed laser vaporization (PLV) were studied. From as-grown PLV-SiNW FET, we found p-channel FET behavior with low conductance. To improve conductance, spin on glass (SOG) and vapor doping were used to dope phosphorus and indium into SiNW, respectively. From doping after synthesis, we could successfully make both n- and p-channel FET devices.

Original languageEnglish (US)
Article numberF9.9
Pages (from-to)281-286
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume832
StatePublished - Aug 25 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 29 2004Dec 2 2004

Fingerprint

Silicon
Field effect transistors
Nanowires
nanowires
field effect transistors
Doping (additives)
silicon
Pulsed lasers
Vaporization
pulsed lasers
Indium
Transport properties
Phosphorus
indium
phosphorus
transport properties
Vapors
vapors
Glass
glass

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Byon, Kumhyo ; Fischer, John E. ; Adu, Kofi W. ; Eklund, Peter C. / Silicon nanowires : Doping dependent n- and p- channel FET behavior. In: Materials Research Society Symposium Proceedings. 2005 ; Vol. 832. pp. 281-286.
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Silicon nanowires : Doping dependent n- and p- channel FET behavior. / Byon, Kumhyo; Fischer, John E.; Adu, Kofi W.; Eklund, Peter C.

In: Materials Research Society Symposium Proceedings, Vol. 832, F9.9, 25.08.2005, p. 281-286.

Research output: Contribution to journalConference article

TY - JOUR

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T2 - Doping dependent n- and p- channel FET behavior

AU - Byon, Kumhyo

AU - Fischer, John E.

AU - Adu, Kofi W.

AU - Eklund, Peter C.

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