Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface

C. Onneby, Carlo G. Pantano

Research output: Contribution to journalArticle

204 Citations (Scopus)

Abstract

Amorphous and single-crystal α-SiC were exposed to various oxygen sources at room temperature. The oxygen sources included the residual gas in an ultrahigh vacuum environment, ambient air, ozone, and oxygen plasma. X-ray photoelectron spectroscopy (XPS) was used to follow changes in the surface composition and to determine the local bonding environment of the Si atoms. It was found that silicon oxycarbide species are formed when these SiC materials are initially exposed to oxygen. With extended exposure to ambient air, a SiO2 layer is subsequently formed over the silicon oxycarbide. However, the native oxide on the single-crystal SiC consists mainly of silicon oxycarbide species. The thicknesses of these native oxides were calculated using the XPS data.

Original languageEnglish (US)
Pages (from-to)1597-1602
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume15
Issue number3
DOIs
StatePublished - Dec 1 1997

Fingerprint

Silicon
Oxygen
silicon
oxygen
photoelectron spectroscopy
Oxides
oxides
X ray photoelectron spectroscopy
residual gas
air
single crystals
oxygen plasma
Single crystals
ultrahigh vacuum
ozone
Ozone
Ultrahigh vacuum
x rays
Air
Surface structure

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "Amorphous and single-crystal α-SiC were exposed to various oxygen sources at room temperature. The oxygen sources included the residual gas in an ultrahigh vacuum environment, ambient air, ozone, and oxygen plasma. X-ray photoelectron spectroscopy (XPS) was used to follow changes in the surface composition and to determine the local bonding environment of the Si atoms. It was found that silicon oxycarbide species are formed when these SiC materials are initially exposed to oxygen. With extended exposure to ambient air, a SiO2 layer is subsequently formed over the silicon oxycarbide. However, the native oxide on the single-crystal SiC consists mainly of silicon oxycarbide species. The thicknesses of these native oxides were calculated using the XPS data.",
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Silicon oxycarbide formation on SiC surfaces and at the SiC/SiO2 interface. / Onneby, C.; Pantano, Carlo G.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 15, No. 3, 01.12.1997, p. 1597-1602.

Research output: Contribution to journalArticle

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