SILICON SCHOTTKY BARRIER MODIFICATION BY LOW ENERGY NITROGEN ION IMPLANTATION.

S. Ringel, S Ashok

Research output: Contribution to journalConference article

Abstract

The application of thin silicon nitride and oxynitride dielectric films as passivant and gate dielectric in VLSI has stimulated interest in the bulk and interfacial properties of these films. In this investigation, Si:N films were formed on both n- and p-Si by low-energy ion implantation in an ion beam sputtering system to yield films of thickness 35-50 A. The influence of these thin insulating films as well as the process of forming them on subsequently fabricated MIS Schottky diodes was studied systematically and definite trends observed on both surface barrier formation and carrier transport.

Original languageEnglish (US)
Number of pages1
JournalElectrochemical Society Extended Abstracts
Volume85-1
StatePublished - Jan 1 1985

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Ion implantation
Nitrogen
Silicon
Dielectric films
Carrier transport
Gate dielectrics
Management information systems
Silicon nitride
Ion beams
Sputtering
Diodes

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

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abstract = "The application of thin silicon nitride and oxynitride dielectric films as passivant and gate dielectric in VLSI has stimulated interest in the bulk and interfacial properties of these films. In this investigation, Si:N films were formed on both n- and p-Si by low-energy ion implantation in an ion beam sputtering system to yield films of thickness 35-50 A. The influence of these thin insulating films as well as the process of forming them on subsequently fabricated MIS Schottky diodes was studied systematically and definite trends observed on both surface barrier formation and carrier transport.",
author = "S. Ringel and S Ashok",
year = "1985",
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day = "1",
language = "English (US)",
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journal = "Electrochemical Society Extended Abstracts",
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SILICON SCHOTTKY BARRIER MODIFICATION BY LOW ENERGY NITROGEN ION IMPLANTATION. / Ringel, S.; Ashok, S.

In: Electrochemical Society Extended Abstracts, Vol. 85-1, 01.01.1985.

Research output: Contribution to journalConference article

TY - JOUR

T1 - SILICON SCHOTTKY BARRIER MODIFICATION BY LOW ENERGY NITROGEN ION IMPLANTATION.

AU - Ringel, S.

AU - Ashok, S

PY - 1985/1/1

Y1 - 1985/1/1

N2 - The application of thin silicon nitride and oxynitride dielectric films as passivant and gate dielectric in VLSI has stimulated interest in the bulk and interfacial properties of these films. In this investigation, Si:N films were formed on both n- and p-Si by low-energy ion implantation in an ion beam sputtering system to yield films of thickness 35-50 A. The influence of these thin insulating films as well as the process of forming them on subsequently fabricated MIS Schottky diodes was studied systematically and definite trends observed on both surface barrier formation and carrier transport.

AB - The application of thin silicon nitride and oxynitride dielectric films as passivant and gate dielectric in VLSI has stimulated interest in the bulk and interfacial properties of these films. In this investigation, Si:N films were formed on both n- and p-Si by low-energy ion implantation in an ion beam sputtering system to yield films of thickness 35-50 A. The influence of these thin insulating films as well as the process of forming them on subsequently fabricated MIS Schottky diodes was studied systematically and definite trends observed on both surface barrier formation and carrier transport.

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M3 - Conference article

AN - SCOPUS:0021788949

VL - 85-1

JO - Electrochemical Society Extended Abstracts

JF - Electrochemical Society Extended Abstracts

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