Silicon surface barrier modification by low-energy nitrogen ion implantation

S. A. Ringel, S. Ashok

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low-energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal-Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.

Original languageEnglish (US)
Pages (from-to)1494-1499
Number of pages6
JournalJournal of the Electrochemical Society
Volume134
Issue number6
DOIs
StatePublished - Jun 1987

Fingerprint

Carrier transport
nitrogen ions
Silicon
Ion bombardment
Amorphous silicon
Silicon nitride
Nitrides
Ion implantation
ion implantation
Electric properties
Nitrogen
Metals
silicon
silicon nitrides
amorphous silicon
nitrides
bombardment
implantation
electrical properties
damage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

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abstract = "The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low-energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal-Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.",
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Silicon surface barrier modification by low-energy nitrogen ion implantation. / Ringel, S. A.; Ashok, S.

In: Journal of the Electrochemical Society, Vol. 134, No. 6, 06.1987, p. 1494-1499.

Research output: Contribution to journalArticle

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AU - Ashok, S.

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AB - The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low-energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal-Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.

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