The influence of ultrathin (≲5 nm) amorphous silicon nitride films formed by low-energy (200–600 eV) nitrogen ion implantation into silicon on the electrical characteristics of metal-Si contacts has been studied. The interface characteristics are determined by both the growth of the nitride layer due to the implantation and the modification of the Si band bending as a result of the ion bombardment damage. It is found that the barrier formation and carrier transport mechanisms are considerably more complex than in other schemes of barrier control. A definite correlation between the electrical properties and implant energy is observed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry