Silicon surface treatments in advanced MOS gate processing

K. Chang, K. Shanmugasundaram, D. O. Lee, P. Roman, C. T. Wu, J. Wang, Jeffrey Shallenberger, P. Mumbauer, R. Grant, R. Ridley, G. Dolny, Jerzy Ruzyllo

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Selected aspects of Si surface treatments in MOS gate processing were investigated. The focus was on surface conditioning prior to high-k gate dielectric mist deposition in planar MOS gate configuration and gate oxidation of inside walls of the trench etched in Si substrate. In the former case integrated anhydrous HF chemical oxide etching process lowers EOT as compared to conventional dilute HF etch performed ex situ. Additional in situ step, the UV/NO re-growth of 0.5 nm thick slightly nitrided oxide, further limits formation of an interfacial oxide and decreases EOT. In the case of oxide grown on RIE-delineated surfaces in the trench no reliable gate oxide can be formed without slight etching of RIE damaged silicon surface. No significant difference between the use of sacrificial oxidation and UV/Cl2 slight etching of walls inside the trench was observed. Trench etching process itself appears to play dominant role in determining reliability of gate oxide in this case.

Original languageEnglish (US)
Pages (from-to)130-135
Number of pages6
JournalMicroelectronic Engineering
Volume72
Issue number1-4
DOIs
StatePublished - Apr 1 2004
EventProceedings of the 13th Biennial Conference on Insulating Film - Barcelona, Spain
Duration: Jun 18 2003Jun 20 2003

Fingerprint

Silicon
surface treatment
Oxides
Surface treatment
oxides
Etching
silicon
Processing
etching
Reactive ion etching
mist
Oxidation
oxidation
Gate dielectrics
Fog
conditioning
Substrates
configurations

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Chang, K., Shanmugasundaram, K., Lee, D. O., Roman, P., Wu, C. T., Wang, J., ... Ruzyllo, J. (2004). Silicon surface treatments in advanced MOS gate processing. Microelectronic Engineering, 72(1-4), 130-135. https://doi.org/10.1016/j.mee.2003.12.028
Chang, K. ; Shanmugasundaram, K. ; Lee, D. O. ; Roman, P. ; Wu, C. T. ; Wang, J. ; Shallenberger, Jeffrey ; Mumbauer, P. ; Grant, R. ; Ridley, R. ; Dolny, G. ; Ruzyllo, Jerzy. / Silicon surface treatments in advanced MOS gate processing. In: Microelectronic Engineering. 2004 ; Vol. 72, No. 1-4. pp. 130-135.
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Chang, K, Shanmugasundaram, K, Lee, DO, Roman, P, Wu, CT, Wang, J, Shallenberger, J, Mumbauer, P, Grant, R, Ridley, R, Dolny, G & Ruzyllo, J 2004, 'Silicon surface treatments in advanced MOS gate processing', Microelectronic Engineering, vol. 72, no. 1-4, pp. 130-135. https://doi.org/10.1016/j.mee.2003.12.028

Silicon surface treatments in advanced MOS gate processing. / Chang, K.; Shanmugasundaram, K.; Lee, D. O.; Roman, P.; Wu, C. T.; Wang, J.; Shallenberger, Jeffrey; Mumbauer, P.; Grant, R.; Ridley, R.; Dolny, G.; Ruzyllo, Jerzy.

In: Microelectronic Engineering, Vol. 72, No. 1-4, 01.04.2004, p. 130-135.

Research output: Contribution to journalConference article

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AU - Chang, K.

AU - Shanmugasundaram, K.

AU - Lee, D. O.

AU - Roman, P.

AU - Wu, C. T.

AU - Wang, J.

AU - Shallenberger, Jeffrey

AU - Mumbauer, P.

AU - Grant, R.

AU - Ridley, R.

AU - Dolny, G.

AU - Ruzyllo, Jerzy

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N2 - Selected aspects of Si surface treatments in MOS gate processing were investigated. The focus was on surface conditioning prior to high-k gate dielectric mist deposition in planar MOS gate configuration and gate oxidation of inside walls of the trench etched in Si substrate. In the former case integrated anhydrous HF chemical oxide etching process lowers EOT as compared to conventional dilute HF etch performed ex situ. Additional in situ step, the UV/NO re-growth of 0.5 nm thick slightly nitrided oxide, further limits formation of an interfacial oxide and decreases EOT. In the case of oxide grown on RIE-delineated surfaces in the trench no reliable gate oxide can be formed without slight etching of RIE damaged silicon surface. No significant difference between the use of sacrificial oxidation and UV/Cl2 slight etching of walls inside the trench was observed. Trench etching process itself appears to play dominant role in determining reliability of gate oxide in this case.

AB - Selected aspects of Si surface treatments in MOS gate processing were investigated. The focus was on surface conditioning prior to high-k gate dielectric mist deposition in planar MOS gate configuration and gate oxidation of inside walls of the trench etched in Si substrate. In the former case integrated anhydrous HF chemical oxide etching process lowers EOT as compared to conventional dilute HF etch performed ex situ. Additional in situ step, the UV/NO re-growth of 0.5 nm thick slightly nitrided oxide, further limits formation of an interfacial oxide and decreases EOT. In the case of oxide grown on RIE-delineated surfaces in the trench no reliable gate oxide can be formed without slight etching of RIE damaged silicon surface. No significant difference between the use of sacrificial oxidation and UV/Cl2 slight etching of walls inside the trench was observed. Trench etching process itself appears to play dominant role in determining reliability of gate oxide in this case.

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Chang K, Shanmugasundaram K, Lee DO, Roman P, Wu CT, Wang J et al. Silicon surface treatments in advanced MOS gate processing. Microelectronic Engineering. 2004 Apr 1;72(1-4):130-135. https://doi.org/10.1016/j.mee.2003.12.028