Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

H. B. Huang, X. Q. Ma, Z. H. Liu, C. P. Zhao, S. Q. Shi, Long-qing Chen

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A multilevel cell spin transfer switching process in a full-Heusler Co 2FeAl0.5Si0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of -90° and +90°, which could not be detected in the experiments due to the same resistance of the -90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.

Original languageEnglish (US)
Article number042405
JournalApplied Physics Letters
Volume102
Issue number4
DOIs
StatePublished - Jan 28 2013

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cells
magnetization
simulation
anisotropy
domain wall

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Huang, H. B. ; Ma, X. Q. ; Liu, Z. H. ; Zhao, C. P. ; Shi, S. Q. ; Chen, Long-qing. / Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar. In: Applied Physics Letters. 2013 ; Vol. 102, No. 4.
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Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar. / Huang, H. B.; Ma, X. Q.; Liu, Z. H.; Zhao, C. P.; Shi, S. Q.; Chen, Long-qing.

In: Applied Physics Letters, Vol. 102, No. 4, 042405, 28.01.2013.

Research output: Contribution to journalArticle

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AU - Huang, H. B.

AU - Ma, X. Q.

AU - Liu, Z. H.

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AU - Shi, S. Q.

AU - Chen, Long-qing

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