Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

H. B. Huang, X. Q. Ma, Z. H. Liu, C. P. Zhao, S. Q. Shi, L. Q. Chen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

A multilevel cell spin transfer switching process in a full-Heusler Co 2FeAl0.5Si0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of -90° and +90°, which could not be detected in the experiments due to the same resistance of the -90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.

Original languageEnglish (US)
Article number042405
JournalApplied Physics Letters
Volume102
Issue number4
DOIs
StatePublished - Jan 28 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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