Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

Cui Zu Chang, Zuocheng Zhang, Kang Li, Xiao Feng, Jinsong Zhang, Minghua Guo, Yang Feng, Jing Wang, Li Li Wang, Xu Cun Ma, Xi Chen, Yayu Wang, Ke He, Qi Kun Xue

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10 »000%, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

Original languageEnglish (US)
Pages (from-to)1090-1094
Number of pages5
JournalNano letters
Volume15
Issue number2
DOIs
StatePublished - Feb 11 2015

Fingerprint

Epitaxial films
Surface states
Modulation
insulators
modulation
Thin films
thin films
Electron transport properties
Chemical potential
Fermi level
Molecular beam epitaxy
Carrier concentration
molecular beam epitaxy
transport properties

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Chang, Cui Zu ; Zhang, Zuocheng ; Li, Kang ; Feng, Xiao ; Zhang, Jinsong ; Guo, Minghua ; Feng, Yang ; Wang, Jing ; Wang, Li Li ; Ma, Xu Cun ; Chen, Xi ; Wang, Yayu ; He, Ke ; Xue, Qi Kun. / Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators. In: Nano letters. 2015 ; Vol. 15, No. 2. pp. 1090-1094.
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abstract = "It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10 »000{\%}, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.",
author = "Chang, {Cui Zu} and Zuocheng Zhang and Kang Li and Xiao Feng and Jinsong Zhang and Minghua Guo and Yang Feng and Jing Wang and Wang, {Li Li} and Ma, {Xu Cun} and Xi Chen and Yayu Wang and Ke He and Xue, {Qi Kun}",
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Chang, CZ, Zhang, Z, Li, K, Feng, X, Zhang, J, Guo, M, Feng, Y, Wang, J, Wang, LL, Ma, XC, Chen, X, Wang, Y, He, K & Xue, QK 2015, 'Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators', Nano letters, vol. 15, no. 2, pp. 1090-1094. https://doi.org/10.1021/nl504047c

Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators. / Chang, Cui Zu; Zhang, Zuocheng; Li, Kang; Feng, Xiao; Zhang, Jinsong; Guo, Minghua; Feng, Yang; Wang, Jing; Wang, Li Li; Ma, Xu Cun; Chen, Xi; Wang, Yayu; He, Ke; Xue, Qi Kun.

In: Nano letters, Vol. 15, No. 2, 11.02.2015, p. 1090-1094.

Research output: Contribution to journalArticle

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T1 - Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators

AU - Chang, Cui Zu

AU - Zhang, Zuocheng

AU - Li, Kang

AU - Feng, Xiao

AU - Zhang, Jinsong

AU - Guo, Minghua

AU - Feng, Yang

AU - Wang, Jing

AU - Wang, Li Li

AU - Ma, Xu Cun

AU - Chen, Xi

AU - Wang, Yayu

AU - He, Ke

AU - Xue, Qi Kun

PY - 2015/2/11

Y1 - 2015/2/11

N2 - It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10 »000%, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

AB - It is crucial for the studies of the transport properties and quantum effects related to Dirac surface states of three-dimensional topological insulators (3D TIs) to be able to simultaneously tune the chemical potentials of both top and bottom surfaces of a 3D TI thin film. We have realized this in molecular beam epitaxy-grown thin films of 3D TIs, as well as magnetic 3D TIs, by fabricating dual-gate structures on them. The films could be tuned between n-type and p-type by each gate alone. Combined application of two gates can reduce the carrier density of a TI film to a much lower level than with only one of them and enhance the film resistance by 10 »000%, implying that Fermi level is tuned very close to the Dirac points of both top and bottom surface states without crossing any bulk band. The result promises applications of 3D TIs in field effect devices.

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