Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K

P. E. Schmidt, M. Octavio, Paul Esqueda

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

Original languageEnglish (US)
Pages (from-to)205-207
Number of pages3
JournalIEEE Electron Device Letters
Volume2
Issue number8
DOIs
StatePublished - 1981

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Ballistics
Electric space charge
Electric potential
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Engineering(all)

Cite this

@article{3bb90ad338d346939775cc5992c36d2b,
title = "Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K",
abstract = "Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.",
author = "Schmidt, {P. E.} and M. Octavio and Paul Esqueda",
year = "1981",
doi = "10.1109/EDL.1981.25403",
language = "English (US)",
volume = "2",
pages = "205--207",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K. / Schmidt, P. E.; Octavio, M.; Esqueda, Paul.

In: IEEE Electron Device Letters, Vol. 2, No. 8, 1981, p. 205-207.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K

AU - Schmidt, P. E.

AU - Octavio, M.

AU - Esqueda, Paul

PY - 1981

Y1 - 1981

N2 - Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

AB - Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

UR - http://www.scopus.com/inward/record.url?scp=0019601718&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0019601718&partnerID=8YFLogxK

U2 - 10.1109/EDL.1981.25403

DO - 10.1109/EDL.1981.25403

M3 - Article

AN - SCOPUS:0019601718

VL - 2

SP - 205

EP - 207

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

ER -