Single-Carrier Space-Charge Controlled Conduction vs. Ballistic Transport in GaAs Devices at 77° K

P. E. Schmidt, M. Octavio, P. D. Esqueda

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Single-carrier space-charge controlled in n+ n n+ GaAs structures at 77° K have been studied. The calculated current-voltage relationships are compared with the ones obtained from the “ballistic” transport theory.

Original languageEnglish (US)
Pages (from-to)205-207
Number of pages3
JournalIEEE Electron Device Letters
Volume2
Issue number8
DOIs
StatePublished - Aug 1981

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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