Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate

Stuart Shizhuo Yin, Chao Wang, Wenbin Zhu, Jimmy Yao, Jun Zou, Xiaoyan Lin, Claire Luo

    Research output: Contribution to journalArticlepeer-review

    10 Scopus citations


    A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost.

    Original languageEnglish (US)
    Pages (from-to)A1380-A1388
    JournalOptics Express
    Issue numberSUPPL. 5
    StatePublished - Aug 25 2014

    All Science Journal Classification (ASJC) codes

    • Atomic and Molecular Physics, and Optics


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