We present the preparation and measurements of nanowires of single-crystal NbSe2. These nanowires were prepared on ultrathin (a10nm) flakes of NbSe2 mechanically exfoliated from a bulk single crystal using a process combining electron beam lithography and reactive plasma etching. The electrical contacts to the nanowires were prepared using Ti/Au. Our technique, which overcomes several limitations of methods developed previously for fabricating superconducting nanowires, also allows for the preparation of complex superconducting nanostructures with a desired geometry. Current-voltage characteristics of individual superconducting single-crystal nanowires with widths down to 30nm and cross-sectional areas as low as 270 nm2 were measured.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Feb 3 2014|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)