Single nanowire radial junction solar cell devices were fabricated using Si nanowires synthesized by Al-catalyzed vapor-liquid-solid growth of the p + core (Al auto-doping) and thin film deposition of the n +-shell at temperatures below 650 °C. Short circuit current densities of ∼ 11.7mAcm- 2 were measured under 1-sun AM1.5G illumination, showing enhanced optical absorption. The power conversion efficiencies were limited to < 1% by the low open circuit voltage and fill factor of the devices, which was attributed to junction shunt leakage promoted by the high p+/n+ doping. This demonstration of a radial junction device represents an important advance in the use of Al-catalyzed Si nanowire growth for low cost photovoltaics.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering