Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's

L. Trabzon, O. O. Awadelkarim, J. Werking, G. Bersuker, Y. D. Chan

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Sinusoidal ac signals are applied to 90-Å thick gateoxide in 0.5-μm n-MOSFET's. The objective is to emulate ac stressing to devices, recently reported to occur during plasma processes. AC stressing is found to be more damaging to the oxide and oxide/silicon interface when compared to de stressing. The damage induced by the ac stress is observed to depend on the signals frequency and amplitude. It is proposed that carrier hopping is primarily responsible for oxide current and device damage observed following the ac stress. This hopping current is insignificant during high-field dc stress. when Fowler-Nordheim tunneling becomes the dominant conduction mechanism.

Original languageEnglish (US)
Pages (from-to)569-571
Number of pages3
JournalIEEE Electron Device Letters
Volume17
Issue number12
DOIs
StatePublished - Dec 1 1996

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Silicon oxides
Oxides
Field emission
Plasmas

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Trabzon, L. ; Awadelkarim, O. O. ; Werking, J. ; Bersuker, G. ; Chan, Y. D. / Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's. In: IEEE Electron Device Letters. 1996 ; Vol. 17, No. 12. pp. 569-571.
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Sinusoidal AC stressing of thin-gate oxides and oxide/silicon interfaces in 0.5-μm n-MOSFET's. / Trabzon, L.; Awadelkarim, O. O.; Werking, J.; Bersuker, G.; Chan, Y. D.

In: IEEE Electron Device Letters, Vol. 17, No. 12, 01.12.1996, p. 569-571.

Research output: Contribution to journalArticle

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