The need for accurate and precise SiO2 thickness measurements is becoming ever more crucial. A number of analytical techniques capable of measuring thickness below 10 nm are available. Six of these techniques, namely X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and spectroscopic ellipsometry are compared and contrasted to determine their relative strengths and weaknesses.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 2000|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering