SiO2 thickness determination by X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and ellipsometry

D. A. Cole, J. R. Shallenberger, S. W. Novak, R. L. Moore, M. J. Edgell, S. P. Smith, C. J. Hitzman, J. F. Kirchhoff, E. Principe, W. Nieveen, F. K. Huang, S. Biswas, R. J. Bleiler, K. Jones

Research output: Contribution to journalArticle

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Abstract

The need for accurate and precise SiO2 thickness measurements is becoming ever more crucial. A number of analytical techniques capable of measuring thickness below 10 nm are available. Six of these techniques, namely X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering, transmission electron microscopy, and spectroscopic ellipsometry are compared and contrasted to determine their relative strengths and weaknesses.

Original languageEnglish (US)
Pages (from-to)440-444
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number1
DOIs
StatePublished - Jan 1 2000

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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