Si/SiGe electron resonant tunneling diodes

D. J. Paul, P. See, I. V. Zozoulenko, K. F. Berggren, B. Kabius, B. Holländer, S. Mantl

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance at 298 K. Peak current densities of 5 kA/cm2 with peak-to-valley current ratios of 1.1 have been achieved. Theoretical modeling of the structure demonstrates that the major current peak results from the tunneling of light-mass electrons from the relaxed substrate and not from the heavy-mass electrons in the emitter accumulation layer.

Original languageEnglish (US)
Pages (from-to)1653-1655
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number11
DOIs
StatePublished - Sep 11 2000

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resonant tunneling diodes
electron mass
electrons
valleys
emitters
current density

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Paul, D. J., See, P., Zozoulenko, I. V., Berggren, K. F., Kabius, B., Holländer, B., & Mantl, S. (2000). Si/SiGe electron resonant tunneling diodes. Applied Physics Letters, 77(11), 1653-1655. https://doi.org/10.1063/1.1309020
Paul, D. J. ; See, P. ; Zozoulenko, I. V. ; Berggren, K. F. ; Kabius, B. ; Holländer, B. ; Mantl, S. / Si/SiGe electron resonant tunneling diodes. In: Applied Physics Letters. 2000 ; Vol. 77, No. 11. pp. 1653-1655.
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Paul, DJ, See, P, Zozoulenko, IV, Berggren, KF, Kabius, B, Holländer, B & Mantl, S 2000, 'Si/SiGe electron resonant tunneling diodes', Applied Physics Letters, vol. 77, no. 11, pp. 1653-1655. https://doi.org/10.1063/1.1309020

Si/SiGe electron resonant tunneling diodes. / Paul, D. J.; See, P.; Zozoulenko, I. V.; Berggren, K. F.; Kabius, B.; Holländer, B.; Mantl, S.

In: Applied Physics Letters, Vol. 77, No. 11, 11.09.2000, p. 1653-1655.

Research output: Contribution to journalArticle

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AU - Mantl, S.

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Paul DJ, See P, Zozoulenko IV, Berggren KF, Kabius B, Holländer B et al. Si/SiGe electron resonant tunneling diodes. Applied Physics Letters. 2000 Sep 11;77(11):1653-1655. https://doi.org/10.1063/1.1309020