Slight etching of silicon to control post-RIE damage

D. K. Hwang, K. Torek, Jerzy Ruzyllo

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF 3 reactive ion etching. The etching methods studied include UV enhanced Cl 2 and remote plasma Ar/NF 3 processes.

Original languageEnglish (US)
Pages137-139
Number of pages3
StatePublished - Jan 1 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: May 13 1996May 14 1996

Other

OtherProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period5/13/965/14/96

Fingerprint

Reactive ion etching
Etching
Silicon
Plasmas

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hwang, D. K., Torek, K., & Ruzyllo, J. (1996). Slight etching of silicon to control post-RIE damage. 137-139. Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .
Hwang, D. K. ; Torek, K. ; Ruzyllo, Jerzy. / Slight etching of silicon to control post-RIE damage. Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .3 p.
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Hwang, DK, Torek, K & Ruzyllo, J 1996, 'Slight etching of silicon to control post-RIE damage', Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, 5/13/96 - 5/14/96 pp. 137-139.

Slight etching of silicon to control post-RIE damage. / Hwang, D. K.; Torek, K.; Ruzyllo, Jerzy.

1996. 137-139 Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .

Research output: Contribution to conferencePaper

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AU - Ruzyllo, Jerzy

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N2 - The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF 3 reactive ion etching. The etching methods studied include UV enhanced Cl 2 and remote plasma Ar/NF 3 processes.

AB - The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF 3 reactive ion etching. The etching methods studied include UV enhanced Cl 2 and remote plasma Ar/NF 3 processes.

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Hwang DK, Torek K, Ruzyllo J. Slight etching of silicon to control post-RIE damage. 1996. Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .