Slight etching of silicon to control post-RIE damage

D. K. Hwang, K. Torek, J. Ruzyllo

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

The goal in the present study was to investigate the use of chemical etching methods to slightly etch silicon and remove the heavily damaged layer and to determine if it is beneficial to surface conditioning after CHF3 reactive ion etching. The etching methods studied include UV enhanced Cl2 and remote plasma Ar/NF3 processes.

Original languageEnglish (US)
Pages137-139
Number of pages3
StatePublished - 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: May 13 1996May 14 1996

Other

OtherProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period5/13/965/14/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Hwang, D. K., Torek, K., & Ruzyllo, J. (1996). Slight etching of silicon to control post-RIE damage. 137-139. Paper presented at Proceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID, Santa Clara, CA, USA, .