Slip damage of silicon wafers subjected to continuous infrared laser irradiation

Sungho Choi, Kyung Young Jhang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Laser irradiation can cause damage to solids, such as slipping, cracking, melting, and ablation. Silicon crystals are brittle, so slipping is a serious problem because it can easily result in fracture. This study investigates the amount of continuous near-infrared (NIR) laser irradiance that induces slip damage in a single-crystal silicon wafer. For this purpose we developed a simulation model based on heat transfer and thermo-elastic analyses. To verify the simulation model, silicon wafer specimens were irradiated by a fiber laser beam (of wavelength 1065 nm), and the surface morphology after laser beam irradiation was inspected using optical microscopy (OM). The irradiation time was fixed at 10 s, and nine different irradiances from 180 W/cm2 to 380 W/cm2 were tested in steps of 25 W/cm2. No slip surface was found after exposure to the irradiances up to 230 W/cm2, but straight slips in the <110> direction appeared at the irradiances of 255 W/cm2 and above. These experimental findings agreed well with the simulation.

Original languageEnglish (US)
Pages (from-to)843-849
Number of pages7
JournalCurrent Applied Physics
Volume14
Issue number6
DOIs
StatePublished - Jan 1 2014

Fingerprint

Infrared lasers
Laser beam effects
Silicon wafers
irradiance
infrared lasers
Laser beams
slip
Irradiation
wafers
damage
irradiation
silicon
Silicon
Fiber lasers
Ablation
Optical microscopy
Surface morphology
Melting
Single crystals
laser beams

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Choi, Sungho ; Jhang, Kyung Young. / Slip damage of silicon wafers subjected to continuous infrared laser irradiation. In: Current Applied Physics. 2014 ; Vol. 14, No. 6. pp. 843-849.
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Slip damage of silicon wafers subjected to continuous infrared laser irradiation. / Choi, Sungho; Jhang, Kyung Young.

In: Current Applied Physics, Vol. 14, No. 6, 01.01.2014, p. 843-849.

Research output: Contribution to journalArticle

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AU - Choi, Sungho

AU - Jhang, Kyung Young

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AB - Laser irradiation can cause damage to solids, such as slipping, cracking, melting, and ablation. Silicon crystals are brittle, so slipping is a serious problem because it can easily result in fracture. This study investigates the amount of continuous near-infrared (NIR) laser irradiance that induces slip damage in a single-crystal silicon wafer. For this purpose we developed a simulation model based on heat transfer and thermo-elastic analyses. To verify the simulation model, silicon wafer specimens were irradiated by a fiber laser beam (of wavelength 1065 nm), and the surface morphology after laser beam irradiation was inspected using optical microscopy (OM). The irradiation time was fixed at 10 s, and nine different irradiances from 180 W/cm2 to 380 W/cm2 were tested in steps of 25 W/cm2. No slip surface was found after exposure to the irradiances up to 230 W/cm2, but straight slips in the <110> direction appeared at the irradiances of 255 W/cm2 and above. These experimental findings agreed well with the simulation.

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